Compound semiconductor device, method for producing same, and resin-sealed type semiconductor device
View Patent ↗In a semiconductor element having a compound semiconductor layer epitaxially grown on a silicon substrate, an object is to suppress generation of deficiency or problems of reliability deriving from the ends of the element that are generated when dividing into semiconductor devices by dicing. A compound semiconductor layer epitaxially grown on a silicon substrate is formed via a buffer layer made of aluminum nitride. In the periphery of the semiconductor device, a scribe lane is present to surround a semiconductor element region. Along the scribe lane, the aluminum nitride layer is covered with a coating film for protection against humidity and moisture.
1. A compound semiconductor device comprising:
a chip substrate being a base of a compound semiconductor chip;
an aluminum nitride layer disposed above the chip substrate;
a compound semiconductor layer disposed above the aluminum nitride layer; and
an element placed on an upper surface of the compound semiconductor layer,
wherein at least one of side surfaces of the aluminum nitride layer is entirely covered by an amorphous layer or a polycrystal layer,
the at least one of side surfaces is arranged along an outer periphery of the chip substrate,
the amorphous layer or the polycrystal layer includes aluminum,
the chip substrate has a first recess along the outer periphery of the chip substrate, and
the amorphous layer or the polycrystal layer is in contact with the first recess.
2. The compound semiconductor device according to claim 1 , wherein the chip substrate is made of any one of silicon, silicon carbide, and sapphire.
3. The compound semiconductor device according to claim 1 , wherein the amorphous layer or the polycrystal layer further includes silicon.
4. The compound semiconductor device according to claim 3 , wherein the amorphous layer or the polycrystal layer contains silicon at not less than 1 at %.
5. The compound semiconductor device according to any one of claims 1 , 3 or 4 , wherein the amorphous layer or the polycrystal layer has peaks and valleys with an average pitch of 0.05 μm to 1.0 μm on a surface of the amorphous layer or the polycrystal layer.
6. A resin-sealed type semiconductor device wherein the amorphous layer or the polycrystal layer of the compound semiconductor device according to any one of claims 1 , 3 or 4 is in contact with a resin agent for assembly for one of the amorphous layer or the polycrystal layer to be under-filled or side-filled by mold resin sealing, incorporation into a component-incorporated substrate, or flip-chip mounting.
7. The compound semiconductor device according to claim 1 , wherein the amorphous layer or the polycrystal layer entirely covers all of the side surfaces of the aluminum nitride layer, and
all of the side surfaces are arranged along the outer periphery of the chip substrate.
8. The compound semiconductor device according to claim 7 , wherein the amorphous layer or the polycrystal layer has peaks and valleys with an average pitch of 0.05 μm to 1.0 μm on a surface of the amorphous layer or the polycrystal layer.
9. The compound semiconductor device according to claim 1 , wherein the aluminum nitride layer has a second recess along the outer periphery of the chip substrate, and
the second recess is closer to the element than the first recess.
10. The compound semiconductor device according to claim 9 , wherein the chip substrate is made of any one of silicon, silicon carbide, and sapphire.
11. A resin-sealed type semiconductor device wherein the amorphous layer or the polycrystal layer of the compound semiconductor device according to claim 9 is in contact with a resin agent for assembly for one of the amorphous layer or the polycrystal layer to be under-filled or side-filled by mold resin sealing, incorporation into a component-incorporated substrate, or flip-chip mounting.
12. A method for producing a compound semiconductor device, wherein the compound semiconductor device includes a chip substrate being a base of a compound semiconductor chip, an aluminum nitride layer disposed above the chip substrate, a compound semiconductor layer disposed above the aluminum nitride layer and an element placed on an upper surface of the compound semiconductor layer, the method comprising:
irradiating a laser beam along a scribe lane of the compound semiconductor device to entirely cover at least one of side surfaces of the aluminum nitride layer by an amorphous layer or a polycrystal layer,
wherein the at least one of side surfaces is arranged along an outer periphery of the chip substrate, and
the amorphous layer or the polycrystal layer includes aluminum.