Granted Patent B1

US 7,027,268 · App. 09/351,743 · Granted Apr 11, 2006

Abstract

Claims (57)

1. A magnetoresistive sensor comprising:

a first pinned layer;

a free layer having a length, a first end and a second end opposite to the first end, the length corresponding to the track width during operation of the magnetoresistive sensor and being defined by the first end and the second end;

a first spacer layer disposed between the first pinned layer and the free layer, the first spacer layer having a first interface with the first pinned layer;

a second pinned layer; and

a second spacer layer disposed between the free layer and the second pinned layer, the second spacer layer having a second interface with the second pinned layer;

wherein the first spacer layer and first pinned layer are in proximity to the first end of the free layer but not the second end of the free layer so that the first spacer layer is between the first pinned layer and the first end of the free layer, wherein the second spacer layer and second pinned layer are in proximity to the second end of the free layer but not the first end of the free layer so that the second spacer layer is between the second pinned layer and the second end of the free layer; and

wherein a direction of a current passed through the magnetoresistive sensor is through the first interface, through the second interface, and along at least a portion of the length of the free layer.

2. The magnetoresistive sensor of claim 1 wherein the free layer has a first side and a second side;

wherein the first pinned layer and the first spacer layer located in proximity to the first side of the free layer; and wherein

the second pinned layer and the second spacer layer located in proximity to the second side of the free layer.

3. The magnetoresistive sensor of claim 1 wherein the first pinned layer has a first magnetization and wherein the magnetoresistive sensor further includes:

a first antiferromagnetic layer in proximity to the first pinned layer, the first antiferromagnetic layer for pinning the first magnetization of the first pinned layer.

4. The magnetoresistive sensor of claim 3 wherein the second pinned layer has a second magnetization and wherein the magnetoresistive sensor further includes:

a second antiferromagnetic layer in proximity to the second pinned layer, the second antiferromagnetic layer for pinning the second magnetization of the second pinned layer.

5. The magnetoresistive sensor of claim 1 wherein the first pinned layer has a first magnetization and wherein the magnetoresistive sensor further includes:

a first permanent magnetic layer in proximity to the first pinned layer, the first permanent magnetic layer for pinning the first magnetization of the first pinned layer.

6. The magnetoresistive sensor of claim 5 wherein the second pinned layer has a second magnetization and wherein the magnetoresistive sensor further includes:

a second permanent magnetic layer in proximity to the second pinned layer, the second permanent magnetic layer for pinning the second magnetization of the second pinned layer.

7. The magnetoresistive sensor of claim 1 wherein the first pinned layer and the second pinned layer further include CoFe.

8. The magnetoresistive sensor of claim 1 wherein the first and second spacer layers further include Cu.

9. The magnetoresistive sensor of claim 2 further comprising:

a third pinned layer;

a third spacer layer disposed between the third pinned layer and the free layer, the third spacer layer having a third interface with the third pinned layer, the third pinned layer and the third spacer layer being in proximity to the first side of the free layer;

a fourth pinned layer; and

a fourth spacer layer disposed between the free layer and the fourth pinned layer, the fourth spacer layer having a fourth interface with the fourth pinned layer, the fourth pinned layer and the fourth spacer being in proximity to the second side of the free layer;

wherein the direction of a current passed through the magnetoresistive sensor is also through the third interface and through the fourth interface.

10. A method for providing a magnetoresistive sensor comprising the steps of:

(a) providing a first pinned layer;

(b) providing a free layer having a length, a first end and a second end opposite to the first end, the length corresponding to the track width during operation of the magnetoresistive sensor and being defined by the first end and the second end;

(c) providing a first spacer layer disposed between the first pinned layer and the free layer, the first spacer layer having a first interface with the first pinned layer;

(d) providing a second pinned layer; and

(e) providing a second spacer layer disposed between the free layer and the second pinned layer, the second spacer layer having a second interface with the second pinned layer;

wherein the first spacer layer and first pinned layer are in provided proximity to the first end of the free layer but not the second end of the free layer so that the first spacer layer is between the first pinned layer and the first end of the free layer, wherein the second spacer layer and second pinned layer are provided in proximity to the second end of the free layer but not the first end of the free layer so that the second spacer layer is between the second pinned layer and the second end of the free layer; and

wherein a direction of a current passed through the magnetoresistive sensor is through the first interface, through the second interface, and along at least a portion of the length of the free layer.

11. The method of claim 10 wherein the free layer providing step (c) further includes the steps of:

(c1) providing a tantalum underlayer;

(c2) providing a copper seed layer;

(c3) providing a magnetic free layer; and

(c4) providing a tantalum capping layer.

12. The method of claim 10 wherein the free layer has a first side and a second side; wherein the first pinned layer and the first spacer layer located in proximity to the first side of the free layer; and wherein the second pinned layer and the second spacer layer located in proximity to the second side of the free layer.

13. The method of claim 10 wherein the first pinned layer has a first magnetization and wherein the method further includes the step of:

(f) providing a first antiferromagnetic layer in proximity to the first pinned layer, the first antiferromagnetic layer for pinning the first magnetization of the first pinned layer.

14. The method of claim 13 wherein the second pinned layer has a second magnetization and wherein the method further includes the step of:

(g) providing a second antiferromagnetic layer in proximity to the second pinned layer, the second antiferromagnetic layer for pinning the second magnetization of the second pinned layer.

15. The method of claim 10 wherein the first pinned layer has a first magnetization and wherein the method further includes the step of:

(f) providing a first permanent magnetic layer in proximity to the first pinned layer, the first permanent magnetic layer for pinning the first magnetization of the first pinned layer.

16. The method of claim 15 wherein the second pinned layer has a second magnetization and wherein the method further includes the step of:

(f) providing a second permanent magnetic layer in proximity to the second pinned layer, the second permanent magnetic layer for pinning the second magnetization of the second pinned layer.

17. The method of claim 10 wherein the first pinned layer and the second pinned layer further include CoFe.

18. The method of claim 1 wherein the first and second spacer layers further include Cu.

19. The method of claim 12 further comprising the steps of:

(f) providing a third pinned layer;

(g) providing a third spacer layer disposed between the third pinned layer and the free layer, the third spacer layer having a third interface with the third pinned layer, the third pinned layer and the third spacer layer being in proximity to the first side of the free layer;

(h) providing a fourth pinned layer; and

(i) providing a fourth spacer layer disposed between the free layer and the fourth pinned layer, the fourth spacer layer having a fourth interface with the fourth pinned layer, the fourth pinned layer and the fourth spacer being in proximity to the second side of the free layer;

wherein the direction of a current passed through the magnetoresistive sensor is also through the third interface and through the fourth interface.

Assignments (7)