IP Library Granted Patent US 6,956,236
Granted Patent B1
US 6,956,236 · App. 09/555,625 · Granted Oct 18, 2005

Wiring, TFT substrate using the same and LCD

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Quick Facts
Patent No.
US 6,956,236
App. No.
09/555,625
Granted
Oct 18, 2005
Kind
B1
Abstract

A gate electrode (wiring) ( 40 ) having a Cu layer ( 40 a ) surrounded by a coating film ( 40 b ) made of titanium or titanium oxide; a TFT substrate ( 31 ) comprising the gate electrode (wiring) ( 40 ) and a LCD comprising a pair of opposing substrates and a liquid crystal disposed between the opposing substrates, wherein one of the pair of opposing substrates is a TFT substrate ( 31 ), are disclosed.

Claims (3)

1. A wire in a gate electrode in a thin film transistor, comprising: a Cu (Copper) layer having a bottom surface, a top surface and two side surfaces, wherein said bottom surface is on and in contact with a first coating film made of titanium, and the remaining three surfaces are coated by and in contact with a second coating film made of titanium oxide.

2. A TFT (thin film transistor) substrate having a wire as claimed in claim 1 .

3. An LCD (liquid crystal display) comprising a pair of opposing substrates and a liquid crystal disposed between the opposing substrates, wherein at least one of the pair of opposing substrates is a TFT substrate as claimed in claim 2 .