Combinatorial synthesis of material chips
View Patent ↗Systems and methods for providing in situ, controllably variable concentrations of one, two or more chemical components on a substrate to produce an integrated materials chip. The component concentrations can vary linearly, quadratically or according to any other reasonable power law with one or two location coordinates. In one embodiment, a source and a mask with fixed or varying aperture widths and fixed or varying aperture spacings are used to produce the desired concentration envelope. In another embodiment, a mask with one or more movable apertures or openings provides a chemical component flux that varies with location on the substrate, in one or two dimensions. In another embodiment, flow of the chemical components through nuzzle slits provides the desired concentrations. An ion beam source, a sputtering source, a laser ablation source, a molecular beam source, a chemical vapor deposition source and/or an evaporative source can provide the chemical component(s) to be deposited on the substrate. Carbides, nitrides, oxides halides and other elements and compounds can be added to and reacted with the deposits on the substrate.
1. A system for in situ depositing on a substrate a mixture of selected first and second chemical components having concentrations of the first and second component that vary linearly with a location coordinate measured along a surface of the substrate, the system comprising:
first and second sources of respective first and second chemical components, spaced apart from a non-moving substrate; and
first and second non-moving adjacent nuzzle slits associated with the first and second sources, respectively, that direct the first and second components toward the substrate with selected first and second flux patterns that vary linearly with a location coordinate x, measured in a selected location coordinate direction that is oriented transverse to a line extending from at least one of the first nuzzle slit and the second nuzzle slit to the substrate to deposit a single layer, in situ combination on a selected portion of the substrate.
2. The system of claim 1 , wherein said first and second slits direct said first flux and said second flux in first and second flux patterns, respectively and direct said first flux and said second flux in selected third and fourth nonuniform flux patterns, respectively, in a selected second coordinate direction that is transverse to a first coordinate direction and is transverse to said line extending from at least one of said first nuzzle slit and said second nuzzle slit to said substrate.
3. The system of claim 1 , wherein at least one of said first source and said second source is drawn from a group of sources consisting of an ion beam source, and a chemical vapor deposition source.
4. The system of claim 1 , wherein at least one of said first and second chemical components includes at least one chemical element drawn from a group of chemical elements consisting of lithium, sodium, potassium, rubidium, cesium, berkelium, magnesium, calcium, strontium, barium, boron, aluminum, gallium, carbon, silicon, germanium, nitrogen, phosphorous, arsenic, oxygen, sulfur, selenium, tellurium, fluorine, chlorine, bromine, and iodine.
5. A system for in situ depositing on a substrate a selected chemical component having a concentration that varies linearly with a location coordinate measured along a surface of the substrate, the system comprising:
a vapor source of a selected first chemical component, spaced apart from a non-moving substrate by a first selected distance, where the source provides a chemical component flux in a flux direction extending from the source toward the substrate; and
a non-moving mask, positioned between the source and the substrate at a second selected distance from the source the mask having at least first and second spaced apart apertures with selected corresponding first and second aperture widths and a selected aperture spacing between the first and second apertures;
where the aperture widths and the aperture spacings are selected so that a flux of the first chemical component varies linearly with a location coordinate x, measured in a selected coordinate direction that is transverse to a line extending from the source to the substrate to deposit a layer of the first chemical component on a selected portion of the substrate.
6. The system of claim 5 , wherein said source is drawn from a group of chemical component sources consisting of an ion beam source, a sputtering source, a laser ablation source, a molecular beam source, a chemical vapor deposition source, and an evaporative source.
7. The system of claim 5 , wherein said first chemical component includes at least one chemical element drawn from a group of chemical elements consisting of lithium, sodium, potassium, rubidium, cesium, berkelium, magnesium, calcium, strontium, barium, boron, aluminum, gallium, carbon, silicon, germanium, nitrogen, phosphorous, arsenic, oxygen, sulfur, selenium, tellurium, fluorine, chlorine, bromine and iodine.
8. The system of claim 2 , wherein said first and second coordinate directions are independent of each other.
9. The system of claim 5 , further comprising:
a second source of a selected second chemical component, spaced apart from said substrate by a third selected distance and positioned adjacent to said first source so that a flux of the second chemical component varies linearly with said location coordinate, to deposit a combined layer of said first chemical component and the second chemical component on a second selected portion of said substrate.