Method of fabricating semiconductor device
View Patent ↗A silicon oxynitride film is formed on a substrate. Then, a heat treatment is performed, while keeping a surface of the silicon oxynitride film in contact with a gas containing nitrogen, such as an NO gas, to introduce at least nitrogen into the silicon oxynitride film and produce a steeply sloped distribution of nitrogen. A semiconductor film containing an impurity, such as an amorphous silicon film, is formed on the silicon oxynitride film. By forming a CMOS device with, in particular, a dual gate structure which comprises p-type and n-type MIS transistors each having a gate oxide film composed of the silicon oxynitride film and a gate electrode composed of a polysilicon film, a high driving force is provided, while boron penetration in the p-type MIS transistor is suppressed.
1. A method of fabricating a semiconductor device, the method comprising the steps of:
(a) forming a silicon oxynitride film on a silicon substrate;
(b) performing a heat treatment while keeping a surface of the silicon oxynitride film in contact with a gas containing nitrogen and oxygen to introduce at least nitrogen into the silicon oxynitride film;
(c) after step (b), forming a semiconductor film containing an impurity of first conductivity type on the silicon oxynitride film;
(d) after step (c), forming a protecting film for the gate on the semiconductor film;
(e) after step (d), forming a protecting layer on the gate composed of the protecting film for the gate and a gate electrode composed of the semiconductor film by patterning the protecting film for the gate and the semiconductor film;
(f) forming a first side wall with a L-shape cross sectional view on the sides of the gate electrode and the protecting layer on the gate, and a second side wall that spreads over the side and the base of the first side wall;
(g) after step (f), forming a gate insulating film composed of the silicon oxynitride film by patterning the silicon oxynitride film,
wherein the gate insulating film has a nitrogen concentration peak formed at around the center portion of the silicon oxynitride film.
2. The method of claim 1 , wherein the silicon oxynitride film is formed by concurrently applying an N 2 O gas and performing a heat treatment to the surface of the silicon substrate in step (a).
3. The method of claim 1 , wherein the step (c) includes the substeps of:
forming, as the semiconductor film an amorphous silicon film on the silicon oxynitride film;
implanting impurity ions into the amorphous silicon film; and
performing a heat treatment for activating the impurity to change the amorphous film into a polysilicon film.
4. The method of claim 1 , wherein the heat treatment is performed at 800 to 1050° C. in the step (b).
5. The method of claim 1 , wherein an NO gas is used as the gas containing nitrogen in the step (b).
6. The method of claim 1 , wherein the N 2 O gas is used as the gas containing nitrogen in the step (b).
7. The method of any one of claims 1 to 4 , and 5 to 6 , wherein the semiconductor device is a p-channel MIS transistor and a silicon film for a gate electrode containing boron is formed as the semiconductor film in step (c).