Deposition method for wiring thin film
View Patent ↗An Al 3 Ti film having a large amount of dissolved Si is deposited on a semiconductor substrate to form a laminate with an Al wiring film, and heat treatment is performed at a temperature of at least 400° C., to thereby absorb excessive Si into the Al 3 Ti film and so prevent the occurrence of Si nodules. By depositing Al film at a temperature of at least 400° C. at the time of depositing the Al wiring film on the Al 3 Ti film, excessive Si is caused to be absorbed in the Al 3 Ti film. Further, at the time of depositing a Ti film on the semiconductor substrate and depositing the Al wiring film, the Al film is deposited at a temperature of a least 400° C., there is reaction between the Ti film within the laminate, causing an Al 3 Ti film to be produced, and excessive Si is absorbed in the Al 3 Ti film produced.
1. A method of depositing a wiring thin film over a semiconductor substrate, the method comprising:
providing a Al 3 Ti target;
providing a substrate;
forming a Ti layer over said substrate;
sputter depositing an Al 3 Ti layer on said Ti layer using said Al 3 Ti target;
depositing an Al layer onto said Al 3 Ti layer using an Al—Si—Cu target; and
annealing said substrate at a temperature of at least 400° C. after said depositing an Al layer and without cooling said substrate, to promote absorption of Si from said Al layer into said Al 3 Ti layer.
2. A method as recited in claim 1 , further comprising pattern-etching said Al layer thereby forming a wiring pattern.
3. A method as recited in claim 1 , further comprising forming an insulating layer between said substrate and said Al3Ti layer.
4. A method of forming a wiring film, the method comprising:
providing a substrate;
depositing a Ti layer over said substrate; depositing an Al layer on said Ti layer using an Al—Si—Cu target; annealing the substrate at a temperature of at least 400° C. after said depositing an Al layer and without cooling the substrate, to form an Al 3 Ti layer on said Ti layer and to promote absorption of Si from said Al layer into said Al 3 Ti layer; and
pattern etching said Al layer after said annealing.
5. A method of forming a wiring film, the method comprising:
providing a substrate;
depositing a Ti layer over the substrate;
depositing an Al 3 Ti layer on said Ti layer using an Al 3 Ti target;
depositing an Al layer on said Al 3 Ti layer using an Al 3 Ti target; annealing the substrate at a temperature of at least 400° C. after said depositing an Al layer and without cooling the substrate, to promote absorption of Si from said Al layer into said Al 3 Ti layer; and
pattern etching said Al layer after said annealing.
6. A method as recited in claim 5 , wherein said Al layer is deposited at a temperature of at least 400° C.
7. A method as recited in claim 5 , wherein said Al 3 Ti layer is deposited at a temperature of at least 400° C.
8. A method as recited in claim 1 , further comprising depositing a TiN film on said Al layer.
9. A method as recited in claim 4 , further comprising forming an insulating layer between said substrate and said Ti film.
10. A method as recited in claim 4 , further comprising depositing a TIN film on said Al layer.
11. A method as recited in claim 5 , further comprising forming an insulating layer between said substrate and said Al 3 Ti layer.
12. A method as recited in claim 5 , further comprising depositing a TiN film on said Al layer.