Contact structure of wiring and a method for manufacturing the same
View Patent ↗First, a conductive material made of aluminum-based material is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode. A gate insulating layer is formed, and a semiconductor layer and an ohmic contact layer are sequentially formed. Next, a conductor layer including a lower layer of Cr and an upper layer of aluminum-based material is deposited and patterned to form a data wire include a data line intersecting the gate line, a source electrode, a drain electrode and a data pad. Then, a passivation layer is deposited and a thermal treatment process using annealing step is executed. At this time, all or part of aluminum oxide (AlO x ) layer having a high resistivity, which is formed on the gate wire and/or the data wire during manufacturing process, may be removed. Then, the passivation layer is patterned to form contact holes exposing the drain electrode, the gate pad and the data pad, respectively. Next, IZO is deposited and patterned to form a pixel electrode, a redundant gate pad and a redundant data pad respectively connected to the drain electrode, the gate pad and the data pad, respectively. By removing aluminum oxide (AlO x ) layer having a high resistivity, through annealing step, the contact resistance between the metal of aluminum-based material, and IZO may be minimized, because they directly contact each other.
1. A thin film transistor (TFT) array panel, comprising:
a gate wire formed on an insulating substrate;
a gate insulating layer covering the gate wire;
a semiconductor layer formed on the gate insulating layer;
a data wire formed on the gate insulating layer and the semiconductor layer;
a passivation layer covering the data wire; and
a transparent conductive layer formed of indium zinc oxide (IZO),
wherein at least one of the gate wire and the data wire is formed of a conductive layer containing aluminum, and the transparent conductive layer is connected to and in direct contact with the conductive layer.
2. The TFT array panel of claim 1 , wherein the data wire has a flat surface.
3. The TFT array panel of claim 1 , wherein the insulating layer and the passivation layer are made of silicon-nitride.
4. The TFT array panel of claim 1 , wherein the gate wire includes a gate line, a gate electrode connected to the gate line, and a gate pad connected to the gate line, and
the data wire includes a data line, a source electrode connected to the data line, a drain electrode separated from the source electrode and opposite to the source electrode with respect to the gate electrode, and a data pad connected to the data line.
5. The TFT array panel of claim 4 , wherein the passivation layer further comprises a second contact hole exposing the data pad and a third contact hole exposing the gate pad along with the gate insulating layer, the first to the third contact holes have a shape including rounds or corner, and a size of the first to the third contact holes are greater than 4 μm*4 μm.
6. The TFT array panel of claim 1 , wherein the conductive layer is formed of aluminum or an aluminum alloy.
7. The TFT array panel of claim 6 , wherein the transparent conductive layer comprises:
a first pattern directly contacting and connected to the gate wire through the gate insulating layer, and
a second pattern directly contacting and connected to the data wire through the passivation layer.
8. A thin film transistor (TFT) array panel, comprising:
a substrate;
a gate wire formed on the substrate and comprising a gate pad and a gate line extended from the gate pad;
a gate insulating layer covering the gate wire;
a data wire formed on the gate insulating layer and comprising a data line, a source electrode connected to the data line and a drain electrode separated from the source electrode;
a passivation layer covering the data wire; and
a transparent conductive layer formed of indium zinc oxide (IZO),
wherein at least one of the gate pad and the drain electrode is formed of a conductive layer containing aluminum, and the transparent conductive layer is connected to and in direct contact with the conductive layer.
9. The TFT array panel of claim 8 , wherein the conductive layer is formed of aluminum or an aluminum alloy.
10. The TFT array panel of claim 9 , wherein the conductive layer is formed of an Al—Nd alloy.
11. The TFT array panel of claim 8 , wherein the passivation layer is formed of silicon nitride.
12. The TFT array panel of claim 8 , wherein the transparent conductive layer formed of IZO is formed from an IZO target including In 2 O 3 and ZnO with a Zn content ranged between 15% to 20%.
13. The TFT array panel of claim 1 , wherein the transparent conductive layer formed of IZO is formed from an IZO target including In 2 O 3 and ZnO with a Zn content ranged between 15% to 20%.
14. The TFT array panel of claim 6 , wherein the conductive layer is formed of an Al—Nd alloy.