Granted Patent
Utility
US 6,358,770
· Confirmation No. 8798
METHOD FOR GROWING NITRIDE SEMICONDUCTOR CRYSTALS, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR FABRICATING THE SAME
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2001-01-12 | TRNA |
Transmittal of New Application | 3 | View | |
| 2001-01-12 | SPEC |
Specification | 44 | View | |
| 2001-01-12 | CLM |
Claims | 2 | View | |
| 2001-01-12 | ABST |
Abstract | 1 | View | |
| 2001-01-12 | DRW |
Drawings-only black and white line drawings | 14 | View | |
| 2001-01-12 | OATH |
Oath or Declaration filed | 3 | View |
Inventors
Kunio Itoh
Kyoto, JAPAN
Masahiro Ishida
Osaka, JAPAN
Attorneys & Agents of Record
Classification
USPC
257/103
H10P14/2926
H10P14/203
H10P14/3258
H10P14/2905
H10P14/3216
H10P14/3416
Prosecution
- Examiner
- MEIER, STEPHEN D
- Art Unit
- 2822
- Customer No.
- 22204
- Docket No.
- 0819-482
- Confirmation No.
- 8798
Foreign Priority
10-148997
·
1998-05-29
·
JAPAN
10-148998
·
1998-05-29
·
JAPAN
Publication
- Pub. No.
- US20010005023A1
- Pub. Date
- 2001-06-28
Patent Term Adjustment
0days
CHANGE OF NAME
Recorded 2014-09-19
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2001-06-07
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Quick Facts
- Patent No.
- US 6,358,770
- App. No.
- 09/758,287
- Filed
- 2001-01-12
- Granted
- 2002-03-19
- Pub. No.
- US20010005023A1
- Examiner
- MEIER, STEPHEN D
- Art Unit
- 2822
- PTA
- 0 days
External Links