IP Library › Granted Patent US 6,507,080
Granted Patent Utility
US 6,507,080 · Confirmation No. 6190

MOS TRANSISTOR AND FABRICATION METHOD THEREOF

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 Code Description Pages PDF
2001-01-17 TRNA Transmittal of New Application 2 View
2001-01-17 SPEC Specification 13 View
2001-01-17 CLM Claims 4 View
2001-01-17 ABST Abstract 1 View
2001-01-17 DRW Drawings-only black and white line drawings 9 View
2001-01-17 OATH Oath or Declaration filed 3 View
2001-01-17 TRNA Transmittal of New Application 2 View
2001-01-17 SPEC Specification 13 View
2001-01-17 CLM Claims 4 View
2001-01-17 ABST Abstract 1 View
2001-01-17 DRW Drawings-only black and white line drawings 9 View
2001-01-17 OATH Oath or Declaration filed 3 View
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Quick Facts
Patent No.
US 6,507,080
App. No.
09/761,902
Filed
2001-01-17
Granted
2003-01-14
Pub. No.
US20010008294A1
Art Unit
2815
PTA
-15 days