IP Library › Granted Patent US 6,500,716
Granted Patent Utility
US 6,500,716 · Confirmation No. 3103

METHOD FOR FABRICATING HIGH VOLTAGE TRANSISTOR

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 Code Description Pages PDF
2014-11-25 OATH Oath or Declaration filed 56 View
2001-01-23 TRNA Transmittal of New Application 4 View
2001-01-23 SPEC Specification 11 View
2001-01-23 CLM Claims 3 View
2001-01-23 ABST Abstract 1 View
2001-01-23 DRW Drawings-only black and white line drawings 8 View
2001-01-23 OATH Oath or Declaration filed 3 View
2001-01-23 TRNA Transmittal of New Application 4 View
2001-01-23 SPEC Specification 11 View
2001-01-23 CLM Claims 3 View
2001-01-23 ABST Abstract 1 View
2001-01-23 DRW Drawings-only black and white line drawings 8 View
2001-01-23 OATH Oath or Declaration filed 3 View
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Quick Facts
Patent No.
US 6,500,716
App. No.
09/767,264
Filed
2001-01-23
Granted
2002-12-31
Pub. No.
US20010023106A1
Art Unit
2823
PTA
-42 days