IP Library Granted Patent US 6,486,512
Granted Patent Utility
US 6,486,512 · Confirmation No. 4995

POWER SEMICONDUCTOR DEVICE HAVING HIGH BREAKDOWN VOLTGE AND METHOD FOR FABRICATING THE SAME

⬇ PDF
Code Description Pages PDF
2001-04-02 SPEC Specification 1 View
2001-04-02 CLM Claims 3 View
2001-02-23 TRNA Transmittal of New Application 2 View
2001-02-23 ADS Application Data Sheet 2 View
2001-02-23 SPEC Specification 10 View
2001-02-23 ABST Abstract 1 View
2001-02-23 DRW Drawings-only black and white line drawings 10 View
2001-02-23 LET. Miscellaneous Incoming Letter 3 View
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Quick Facts
Patent No.
US 6,486,512
App. No.
09/790,815
Filed
2001-02-23
Granted
2002-11-26
Pub. No.
US20010030346A1
Examiner
NADAV, ORI
Art Unit
2811
PTA
0 days