IP Library Granted Patent US 6,860,793
Granted Patent B2
US 6,860,793 · App. 09/805,328 · Granted Mar 1, 2005

Window portion with an adjusted rate of wear

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Quick Facts
Patent No.
US 6,860,793
App. No.
09/805,328
Granted
Mar 1, 2005
Kind
B2
Abstract

A polishing pad includes a polishing layer, and the transparent window portion of the polishing layer having dispersed particles to increase the rate at which the window portion wears away during a polishing operation, and to avoid forming a lump in the polishing layer.

Claims (24)

1. A polishing pad for chemical mechanical polishing a semiconductor wafer comprising:

a polishing surface having a first wear rate during polishing;

a window portion formed in the polishing pad and having a window surface formed flush with the polishing surface; and

wherein the window surface has a second wear rate during polishing greater than the first wear rate.

2. The polishing pad of claim 1 , wherein the second wear rate is 5% to 25% greater than the first wear rate.

3. The polishing pad of claim 1 , wherein the window portion includes a polymerized blend of two immiscible polymers.

4. The polishing pad of claim 1 , wherein the window portion includes at least one of polymethylmethacrylate and polycarbonate.

5. The polishing pad of claim 1 , wherein the window portion includes a polymer matrix having discontinuities formed therein that act to increase the wear rate of the polymer matrix without significantly contributing to light scattering.

6. The polishing pad of claim 5 , wherein the discontinuities include at least one selected from the group of discontinuities comprising: solid particles, fluids, gases and immiscible polymers.

7. The polishing pad of claim 5 , wherein the discontinuities include solid matter having a lower resistance to wear than the polymer matrix.

8. The polishing pad of claim 7 , wherein the solid matter includes at least one type of solid particles selected from the group of particles comprising: silica, titania, alumina, ceria, and plastic.

9. An apparatus for polishing a wafer comprising:

a polishing pad having a surface and a first wear rate during polishing;

a window portion formed in the polishing pad and having a surface formed flush with the polishing pad surface;

wherein the window portion has a second wear rate during polishing equal to or greater than the first wear rate so that the window surface remains flush with the polishing pad surface during polishing; and

wherein the second wear rate is 5% to 25% greater than the first wear rate.

10. An apparatus for polishing a wafer comprising:

a polishing pad having a surface and a first wear rate during polishing;

a window portion formed in the polishing pad and having a surface formed flush with the polishing pad surface;

wherein the window portion has a second wear rate during polishing equal to or greater than the first wear rate so that the window surface remains flush with the polishing pad surface during polishing; and

wherein the window portion includes a polymer matrix having discontinuities formed therein that act to increase the wear rate of the polymer matrix without significantly contributing to light scattering.

11. The apparatus of claim 10 , wherein the discontinuities include at least one selected from the group of discontinuities comprising: solid particles, fluids, gases and immiscible polymers.

12. The apparatus of claim 11 , wherein the discontinuities include solid matter having a lower resistance to wear than the polymer matrix.

13. The apparatus of claim 12 , wherein the solid matter includes at least one type of solid particles selected from the group of particles comprising: silica, titania, alumina, ceria, and plastic.