Semiconductor device having an active region formed from group III nitride
View Patent ↗The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion of the active region by oxidizing the group III nitride semiconductor. On the active region, a gate electrode in Schottky contact with the active region extending onto the insulating oxide film and having an extended portion on the insulating oxide film is formed, and ohmic electrodes respectively serving as a source electrode and a drain electrode are formed with space from side edges along the gate length direction of the gate electrode.
1. A semiconductor device comprising:
an active region formed on a substrate from a group III nitride semiconductor; and
an insulating oxide film formed in a peripheral portion of said active region on said substrate by oxidizing said group III nitride semiconductor.
2. The semiconductor device of claim 1 ,
wherein a gate electrode, and a source electrode and a drain electrode sandwiching said gate electrode are formed on said active region.
3. The semiconductor device of claim 2 ,
wherein said gate electrode extends from said active region onto said insulating oxide film.
4. A plurality of semiconductor devices comprising:
a group III nitride semiconductor formed in a plurality of device formation regions each surrounded with a scribe region on a substrate in a wafer state; and
a protection oxide film formed in a peripheral portion of said scribe region on said substrate by oxidizing said group III nitride semiconductor.
5. A semiconductor device comprising:
a pad electrode formed on a substrate; and
an insulating oxide film formed between said substrate and said pad electrode by oxidizing a group III nitride semiconductor.
6. A semiconductor device comprising:
a laser structure formed on a substrate and having a cavity including a plurality of group III nitride semiconductors; and
a protection oxide film formed on side faces of said laser structure including facets of said cavity by oxidizing said group III nitride semiconductors.