IP Library › Granted Patent US 7,141,879
Granted Patent B2
US 7,141,879 · App. 09/818,906 · Granted Nov 28, 2006

Semiconductor device

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Quick Facts
Patent No.
US 7,141,879
App. No.
09/818,906
Granted
Nov 28, 2006
Kind
B2
Abstract

There is described an improved semiconductor device of chip-scale package (CSP) comprising posts provided on respective electrode pads of a semiconductor chip, and solder balls which are provided on the respective posts as external terminals after the semiconductor chip has been encapsulated with resin while the posts are held in a projecting manner. The semiconductor device prevents occurrence of cracks, which would otherwise be caused by stress which is induced by a difference in coefficient of linear expansion between the semiconductor chip and the sealing resin and is imposed on the posts. In order to alleviate the stress imposed on the posts, a stress-absorbing layer formed from a metal layer having a low Young's modulus, such as gold (Au) or palladium (Pd), is interposed in the middle of each of the posts.

Claims (10)

1. A semiconductor device comprising:

a semiconductor chip,

a protective insulating layer comprising a coating layer covering the surface of the semiconductor chip;

a plurality of connecting conductors connected to the surface of the semiconductor chip and penetrating the coating layer beyond the outside surface of the coating layer, wherein the connecting conductors are connected to bumps as external terminals beyond the outside surface of the coating layer, and wherein the connecting conductors do not include wiring layers and the bumps;

wherein the connecting conductor includes a plurality of layers formed of same material and at least one of the layers is formed as a stress-absorbing layer having lower hardness than other layer.

2. The semiconductor device according to claim 1 , wherein said connecting conductor is formed from anisotropic conductive material.

3. The semiconductor device according to claim 1 , wherein said connecting conductor is formed from conductive material containing metal particles.

4. The semiconductor device according to claim 1 , wherein said connecting conductor is formed by means of stacking a plurality of layers in a staggered manner.

5. The semiconductor device according to claim 4 , wherein said plurality of layers of the connecting conductor are formed in substantially identical diameter.

6. The semiconductor device according to claim 4 , wherein said plurality of layers of the connecting conductor are formed in different diameters from each other in sequence of layers.