IP Library › Granted Patent US 6,677,644
Granted Patent Utility
US 6,677,644 · Confirmation No. 5820

SEMICONDUCTOR INTEGRATED CIRCUIT HAVING LOW VOLTAGE AND HIGH VOLTAGE TRANSISTORS

Inventor: Yoshifumi Yoshida
Patented Case View Patent ↗ View Publication ↗
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2003-10-30 IFEE Issue Fee Payment (PTO-85B) 1 View
2003-10-30 FRPR Certified Copy of Foreign Priority Application 17 View
2001-06-28 TRNA Transmittal of New Application 3 View
2001-06-28 SPEC Specification 22 View
2001-06-28 CLM Claims 3 View
2001-06-28 ABST Abstract 2 View
2001-06-28 DRW Drawings-only black and white line drawings 3 View
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Quick Facts
Patent No.
US 6,677,644
App. No.
09/893,724
Filed
2001-06-28
Granted
2004-01-13
Pub. No.
US20020008262A1
Art Unit
2826
PTA
-139 days