Patent Application
Utility
App. No. 09/908,886
· Confirmation No. 9212
STRUCTURE AND METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURES AND DEVICES UTILIZING THE FORMATION OF A COMPLIANT SUBSTRATE AND ION BEAM ASSISTED DEPOSITION FOR MATERIALS USED TO FORM THE SAME
Expressly Abandoned -- During Examination
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2001-07-20 | TRNA |
Transmittal of New Application | 2 | View | |
| 2001-07-20 | ADS |
Application Data Sheet | 2 | View | |
| 2001-07-20 | SPEC |
Specification | 29 | View | |
| 2001-07-20 | CLM |
Claims | 6 | View | |
| 2001-07-20 | ABST |
Abstract | 1 | View | |
| 2001-07-20 | DRW |
Drawings-only black and white line drawings | 7 | View | |
| 2001-07-20 | OATH |
Oath or Declaration filed | 4 | View |
Inventors
Attorneys & Agents of Record
Classification
USPC
438/46
H10P14/3238
H10P14/69398
H10P14/3402
H10P14/3822
H10P14/3251
H10P14/2905
H10P14/3256
C30B25/02
C30B25/18
C30B29/40
C30B29/403
C30B29/406
Prosecution
- Examiner
- KANG, DONGHEE
- Art Unit
- 2811
- Customer No.
- 22850
- Docket No.
- 211689US99
- Confirmation No.
- 9212
Publication
- Pub. No.
- US20030015725A1
- Pub. Date
- 2003-01-23
No related applications found.
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2001-07-20
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Quick Facts
- App. No.
- 09/908,886
- Filed
- 2001-07-20
- Pub. No.
- US20030015725A1
- Examiner
- KANG, DONGHEE
- Art Unit
- 2811
External Links