Granted Patent
Utility
US 6,656,780
· Confirmation No. 9034
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING NITROGEN IONS BY TWICE RTA PROCESSES
Inventor:
Hitomi Watanabe
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⬇ PDF
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2003-10-02 | IFEE |
Issue Fee Payment (PTO-85B) | 1 | View | |
| 2003-10-02 | FRPR |
Certified Copy of Foreign Priority Application | 12 | View | |
| 2001-07-27 | TRNA |
Transmittal of New Application | 3 | View | |
| 2001-07-27 | SPEC |
Specification | 8 | View | |
| 2001-07-27 | CLM |
Claims | 2 | View | |
| 2001-07-27 | ABST |
Abstract | 1 | View | |
| 2001-07-27 | DRW |
Drawings-only black and white line drawings | 2 | View |
Inventors
Hitomi Watanabe
Chiba-shi, JAPAN
Attorneys & Agents of Record
Classification
USPC
438/197
H10D64/0134
H10D84/0181
H10D84/038
H10D64/693
H10D64/01344
Prosecution
- Examiner
- HUYNH, YENNHU B
- Art Unit
- 2813
- Docket No.
- S004-4336
- Confirmation No.
- 9034
Foreign Priority
2000-299546
·
2000-09-29
·
JAPAN
Publication
- Pub. No.
- US20020039816A1
- Pub. Date
- 2002-04-04
Patent Term Adjustment
-15days
No related applications found.
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Quick Facts
- Patent No.
- US 6,656,780
- App. No.
- 09/916,518
- Filed
- 2001-07-27
- Granted
- 2003-12-02
- Pub. No.
- US20020039816A1
- Examiner
- HUYNH, YENNHU B
- Art Unit
- 2813
- PTA
- -15 days
External Links