Granted Patent
Utility
US 6,590,252
· Confirmation No. 8819
SEMICONDUCTOR DEVICE WITH OXYGEN DIFFUSION BARRIER LAYER FORMED FROM COMPOSITE NITRIDE
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⬇ PDF
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2001-08-06 | TRNA |
Transmittal of New Application | 2 | View | |
| 2001-08-06 | ADS |
Application Data Sheet | 2 | View | |
| 2001-08-06 | SPEC |
Specification | 36 | View | |
| 2001-08-06 | CLM |
Claims | 6 | View | |
| 2001-08-06 | ABST |
Abstract | 1 | View | |
| 2001-08-06 | DRW |
Drawings-only black and white line drawings | 5 | View | |
| 2001-08-06 | OATH |
Oath or Declaration filed | 3 | View |
Inventors
Toshie Kutsunai
Kusatsu-shi, JAPAN
Shinichiro Hayashi
Takatsuki-shi, JAPAN
Takumi Mikawa
Kyoto-shi, JAPAN
Yuji Judai
Uji-shi, JAPAN
Attorneys & Agents of Record
Classification
USPC
438/295
Prosecution
- Examiner
- WILSON, SCOTT R
- Art Unit
- 2826
- Customer No.
- 22204
- Docket No.
- 740819-609
- Confirmation No.
- 8819
Foreign Priority
2000-337601
·
2000-11-06
·
JAPAN
Publication
- Pub. No.
- US20020055223A1
- Pub. Date
- 2002-05-09
Patent Term Adjustment
-59days
CHANGE OF NAME
Recorded 2014-09-19
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2001-08-06
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Quick Facts
- Patent No.
- US 6,590,252
- App. No.
- 09/921,884
- Filed
- 2001-08-06
- Granted
- 2003-07-08
- Pub. No.
- US20020055223A1
- Examiner
- WILSON, SCOTT R
- Art Unit
- 2826
- PTA
- -59 days
External Links