N-type semiconductor diamond and its fabrication method
View Patent ↗A substrate is polished and made an inclined substrate, which is exposed to a hydrogen plasma and is thereby smoothened. The substrate is then heated controlledly until it surface temperature reaches 830° C. Meanwhile, a gas mixture of 1% methane, 50 ppm hydrogen sulfide and hydrogen is introduced in a tubular reaction vessel to flow therethrough at 200 ml/min, where microwave plasma is excited to cause n-type semiconductor diamond to epitaxially grow on the substrate. An ion doped n-type semiconductor is thus formed that has a single donor level of an activation energy at 0.38 eV and is high in mobility and of high quality.
1. An n-type semiconductor diamond, characterized by a making method comprised of:
mechanically polishing a (100) diamond surface to make it in an inclined diamond substrate;
subjecting a surface of said inclined diamond substrate to a hydrogen plasma treatment to make said substrate surface to consist of steps each in the order of an atomic layer; and
subjecting said substrate surface consisted of steps each in the order of an atomic layer to an exited raw material gas made of a volatile hydrocarbon compound, a sulfur compound and a hydrogen gas by a microwave plasma to cause n-type semiconductor diamond to grow epitaxially on said surface consisted of steps each in the order of an atomic layer,
wherein said n-type semiconductor has a single donor level of 0.38 eV, which is sufficient to allow operation of said n-type semiconductor diamond as p-n junction device.
2. A method of making an n-type semiconductor diamond, characterized in that it comprises:
mechanically polishing a diamond substrate to make it in an inclined diamond substrate, which is formed by mechanically polishing a diamond (100) face oriented substrate so that its face normal is inclined at an angle between 1.5 and 6 degrees with respect to its <100> direction in a plane made by either its <100> and <010> directions or its <100> and <001> directions;
subjecting a surface of said inclined diamond substrate to a hydrogen plasma treatment to make it even; and
exciting a raw material gas made of a volatile hydrocarbon compound, a sulfur compound and a hydrogen gas by a microwave plasma while maintaining at a given temperature said substrate surface smoothened as aforesaid to cause an n-type semiconductor diamond to grow epitaxially on said smoothened substrate.
3. A method of making an n-type semiconductor diamond asset forth in claim 2 , characterized in that said diamond substrate is a diamond (100) face oriented substrate.
4. A method of making an n-type semiconductor diamond as set forth in claim 2 , characterized in that said hydrogen plasma treatment comprises a treatment of exposing said inclined substrate to the hydrogen plasma of a hydrogen pressure of 10 to 50 Torr and a microwave output of 200 to 1200 W at a substrate temperature of 700 to 1200° C. for a period of 0.5 hours to 5 hours, thereby to make even said substrate surface to consist of steps each in the order of an atomic layer.
5. A method of making an n-type semiconductor diamond as set forth in claim 2 , characterized in that said given substrate temperature is between 700 and 1100° C.
6. A method of making an n-type semiconductor diamond as set forth in claim 5 , characterized in that said given substrate temperature is 830° C.