Selectively bonded thin film layer and substrate layer for processing of useful devices
View Patent ↗A layered structure generally includes a first layer suitable for having a useful element formed therein or thereon selectively attached or bonded to a second layer. A method to form a layered structure generally comprises selectively adhering a first substrate to a second substrate.
1. A structure comprising:
a first layer selectively bonded to a second layer, wherein selective bonding includes at least one region of strong bonding and at least one region of weak bonding at the interface of the first layer and the second layer, wherein the first layer at the region of weak bonding contains a useful device therein or thereon, said useful device not being present at the one or more regions of strong bonding, and further wherein a bond strength ratio of a bond strength at the region of strong bonding to a bond strength at the region of weak bonding is greater than 1.
2. The structure as in claim 1 , wherein the first layer and the second layer are in condition for separation by debonding primarily or entirely in the region of strong bonding, minimizing detriment to the useful device to be formed.
3. The structure as in claim 2 , wherein regions of weak bonding are in condition for separating by a lesser degree of debonding than is required for the regions of strong bonding.
4. The structure as in claim 1 , wherein the first layer is selected from the group of materials consisting of plastic, metal, semiconductor, insulator, monocrystalline, amorphous, noncrystalline, biological, or a combination comprising at least one of the foregoing materials.
5. The structure as in claim 1 , wherein the first layer is selected from the group of materials consisting of monocrystalline silicon, polycrystalline silicon, noncrystalline silicon, polysilicon, Si 3 N 4 , SiC, SiO 2 , GaAs, GaN, InP, CdSe, CdTe, SiGe, GaAsP, GaAlAs, InAs, AlGaSb, InGaAs, ZnS, AlN, TiN, sapphire, crystal quartz, glass quartz, diamond, silica, silicate based material, or a combination comprising at least one of the foregoing materials.
6. The structure as in claim 1 , wherein the second layer is selected from the group of materials consisting of plastic, metal, semiconductor, insulator, monocrystalline, amorphous, noncrystalline, biological, or a combination comprising at least one of the foregoing materials.
7. The structure as in claim 1 , wherein the second layer is selected from the group of materials consisting of monocrystalline silicon, polycrystalline silicon, noncrystalline silicon, polysilicon, Si 3 N 4 , SiC, SiO 2 , GaAs, GaN, InP, CdSe, CdTe, SiGe, GaAsP, GaAlAs, InAs, AlGaSb, InGaAs, ZnS, AlN, TiN, sapphire, crystal quartz, glass quartz, diamond, silica, silicate based material, or a combination comprising at least one of the foregoing materials.
8. The structure as in claim 1 , wherein the first layer comprises semiconductor.
9. The structure as in claim 1 , wherein the first layer comprises silicon and the second layer comprises silicon.
10. The structure as in claim 1 , wherein the first layer comprises silicon and the second layer comprises glass.
11. The structure as in claim 1 , wherein the first layer comprises silicon and the second layer comprises quartz.
12. The structure as in claim 1 , wherein the bond strength ratio of the bond strength at the region of strong bonding to the bond strength at the region of weak bonding is greater than about 2.
13. The structure as in claim 1 , wherein the bond strength ratio of the bond strength at the region of strong bonding to the bond strength at the region of weak bonding is greater than about 5.
14. The structure as in claim 1 , wherein the bond strength ratio of the bond strength at the region of strong bonding to the bond strength at the region of weak bonding is greater than about 10.
15. The structure as in claim 1 , wherein the first layer is selectively bonded to the second layer at a periphery of an interface between the first layer and the second layer.
16. A semiconductor device comprising
a first semiconductor substrate selectively bonded to a second support substrate, including at least one region of strong bonding and at least one region of weak bonding at the interface of the first layer and the second layer, and
a useful structure in or upon the first layer at the at least one region of weak bonding, said useful structure not being present in one or more regions of strong bonding.
17. The semiconductor device as in claim 16 , wherein the first semiconductor substrate having the useful structure therein or thereupon is removed from the second support substrate.
18. A structure comprising:
a first layer selectively bonded to a second layer, including at least one region of strong bonding and at least one region of weak bonding at the interface of the first layer and the second layer, wherein the first layer at the region of weak bonding contains a useful device therein or thereon, said useful device not being present in said one or more regions of strong bending.