IP Library › Granted Patent US 6,552,363
Granted Patent Utility
US 6,552,363 · Confirmation No. 1166

POLYSILICON FET BUILT ON SILICON CARBIDE DIODE SUBSTRATE

Inventor: Srikant Sridevan
Patented Case View Patent ↗ View Publication ↗
⬇ PDF
 Code Description Pages PDF
2001-09-18 TRNA Transmittal of New Application 2 View
2001-09-18 SPEC Specification 5 View
2001-09-18 CLM Claims 2 View
2001-09-18 ABST Abstract 1 View
2001-09-18 DRW Drawings-only black and white line drawings 2 View
2001-09-18 OATH Oath or Declaration filed 1 View
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Quick Facts
Patent No.
US 6,552,363
App. No.
09/955,655
Filed
2001-09-18
Granted
2003-04-22
Pub. No.
US20030052321A1
Examiner
NADAV, ORI
Art Unit
2811
PTA
0 days