Granted Patent
Utility
US 6,541,323
· Confirmation No. 3615
METHOD FOR FABRICATING POLYSILICON THIN FILM TRANSISTOR
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⬇ PDF
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2001-10-01 | TRNA |
Transmittal of New Application | 4 | View | |
| 2001-10-01 | SPEC |
Specification | 11 | View | |
| 2001-10-01 | CLM |
Claims | 3 | View | |
| 2001-10-01 | ABST |
Abstract | 1 | View | |
| 2001-10-01 | DRW |
Drawings-only black and white line drawings | 4 | View | |
| 2001-10-01 | OATH |
Oath or Declaration filed | 3 | View |
Inventors
Joon Young Yang
Gyeonggi-do, KOREA, REPUBLIC OF
Jae Beom Choi
Gyeonggi-do, KOREA, REPUBLIC OF
Attorneys & Agents of Record
Classification
USPC
438/200
H10D30/6732
G02F1/136
H10D30/0316
H10D30/0321
H10D30/6745
H10D86/0225
H10P14/3238
H10P14/3806
H10P14/3411
Prosecution
- Examiner
- DOAN, THERESA T
- Art Unit
- 2814
- Customer No.
- 30827
- Docket No.
- 8734.014.00-US
- Confirmation No.
- 3615
Foreign Priority
P2000-58678
·
2000-10-06
·
REPUBLIC OF KOREA
Publication
- Pub. No.
- US20020102781A1
- Pub. Date
- 2002-08-01
Patent Term Adjustment
-160days
No related applications found.
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2002-04-01
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Quick Facts
- Patent No.
- US 6,541,323
- App. No.
- 09/966,749
- Filed
- 2001-10-01
- Granted
- 2003-04-01
- Pub. No.
- US20020102781A1
- Examiner
- DOAN, THERESA T
- Art Unit
- 2814
- PTA
- -160 days
External Links