IP Library Granted Patent US 6,637,930
Granted Patent Utility
US 6,637,930 · Confirmation No. 5601

METHOD FOR CALCULATING THE TEMPERATURE RISE PROFILE OF A POWER MOSFET

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Code Description Pages PDF
2003-08-11 IFEE Issue Fee Payment (PTO-85B) 1 View
2003-08-08 LET. Miscellaneous Incoming Letter 1 View
2003-08-08 DRW Drawings-only black and white line drawings 9 View
2001-12-07 TRNA Transmittal of New Application 2 View
2001-12-07 DRW Drawings-only black and white line drawings 9 View
2001-10-02 TRNA Transmittal of New Application 1 View
2001-10-02 ADS Application Data Sheet 1 View
2001-10-02 SPEC Specification 11 View
2001-10-02 CLM Claims 2 View
2001-10-02 ABST Abstract 1 View
2001-10-02 DRW Drawings-only black and white line drawings 9 View
2001-10-02 OATH Oath or Declaration filed 1 View
2001-10-02 LET. Miscellaneous Incoming Letter 1 View
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Quick Facts
Patent No.
US 6,637,930
App. No.
09/967,921
Filed
2001-10-02
Granted
2003-10-28
Pub. No.
US20030067955A1
Art Unit
2859
PTA
-8 days