Semiconductor laser device
View Patent ↗A semiconductor laser device comprises, on top of an active layer, an n-type cladding layer of Al x1 Ga 1−x1 As and a p-type cladding layer of (Al x Ga 1−x ) y In 1−y P for defining a barrier height. The p-type cladding layer for defining a barrier height contains more component elements than the n-type cladding layer. The potential difference between the conduction band edges of the p-type cladding layer for defining a barrier height and the active layer is greater than the potential difference between the conduction band edges of the n-type cladding layer and the active layer. The carriers in the active layer are prevented from overflowing into the p-type cladding layer and a material having a high thermal conductivity is used for the n-type cladding layer to prevent the phenomenon of thermal saturation, thereby providing improved optical output.
1. A semiconductor laser device having an active layer, acting as a region for generating laser, provided on a substrate, said semiconductor laser device comprising:
an n-type cladding layer, formed of a first semiconductor containing two or more component elements but containing no phosphor, underlying said active layer; and
a p-type cladding layer for defining a barrier height, said p-type cladding layer being formed of a second semiconductor containing four or more component elements and being disposed opposite to said n-type cladding layer to sandwich said active layer between said n-type cladding layer and said p-type cladding layer, wherein
said second semiconductor includes more component elements than said first semiconductor, and
a potential difference between conduction band edges of said p-type cladding layer for defining a barrier height and said active layer is greater than a potential difference between conduction band edges of said n-type cladding layer and said active layer.
2. The semiconductor laser device according to claim 1 , wherein
said active layer is formed of AlGaAs or GaAs, and
said second semiconductor forming said p-type cladding layer for defining a barrier height has a composition expressed by (Al x Ga 1−x ) y In 1−y P (0<x<1, 0<y<1).
3. The semiconductor laser device according to claim 2 , wherein
said p-type cladding layer for defining a barrier height has a thickness of 10 nm or more and 300 nm or less.
4. The semiconductor laser device according to claim 2 , wherein
said second semiconductor has an Al composition ratio x within the range of 0.3<x<0.7.
5. The semiconductor laser device according to claim 2 , wherein said second semiconductor has an In composition ratio y within the range of 0.45<y<0.55.
6. The semiconductor laser device according to claim 1 , wherein said first semiconductor forming said n-type cladding layer has a composition expressed by Al x1 Ga 1−x1 As. (0<x 1 <1).
7. The semiconductor laser device according to claim 6 , wherein said first semiconductor has an Al composition ratio x 1 within the range of 0.2<x 1 <0.7.
8. The semiconductor laser device according to claim 1 , wherein said active layer has a thickness of 0.5 nm or more and 5 nm or less.
9. The semiconductor laser device according to claim 1 , further comprising a semiconductor layer of Al x2 Ga 1−x2 AS (0<x 2 <1) disposed opposite to said active layer to sandwich said p-type layer for defining a barrier height between said active layer and said semiconductor layer.
10. The semiconductor laser device according to claim 1 , wherein said p-type cladding layer for defining barrier height overlies said active layer and includes phosphor as a component element, and said active layer is formed of a semiconductor containing no phosphor.
11. The semiconductor laser device according to claim 1 , comprising a Fabry-Perot (FP) resonator cavity.
12. The semiconductor laser device according to claim 1 , further comprising a distributed Bragg reflector (DBR) structure.
13. A semiconductor laser device having an active layer, acting as a region for generating laser, provided on a substrate, said semiconductor laser device comprising:
an n-type cladding layer formed of a first semiconductor containing no phosphor and underlying said active layer;
a p-type cladding layer for defining a barrier height, said p-type cladding layer being formed of a second semiconductor containing four or more component elements and being disposed opposite to said n-type cladding layer to sandwich said active layer between said n-type cladding layer and said p-type cladding layer; and
at least one p-type cladding layer for relaxing a first spike, said p-type cladding layer being provided between said p-type cladding layer for defining a barrier height and said active layer, wherein
the magnitude of a potential difference between valence band edges of said p-type cladding layer for defining a barrier height and said active layer is greater than the magnitude of a potential difference between valence band edges of said cladding layer for relaxing the first spike and said active layer.
14. The semiconductor laser device according to claim 13 , wherein said active layer is formed of AlGaAs or GaAs, and said second semiconductor forming said p-type cladding layer for defining a barrier height has a composition expressed by (Al x1 Ga 1−x1 ) y1 In 1−y1 P (0<x 1 <1, 0<y 1 <1).
15. The semiconductor laser device according to claim 14 , wherein said p-type cladding layer for relaxing the first spike has a composition expressed by Al x2 Ga 1−x2 As (0<x 2 <1), where x 2 increases in a direction from said active layer to the p-type cladding layer for defining a barrier height.
16. The semiconductor laser device according to claim 14 , wherein said p-type cladding layer for relaxing the first spike has a composition expressed by (Al x3 Ga 1−x3 ) y2 In 1−y2 P (0<x 3 <1, 0<y 2 <1), where x 3 increases in a direction from said active layer to the p-type cladding layer for defining a barrier height.
17. The semiconductor laser device according to claim 14 , further comprising a p-type contact layer disposed opposite to said active layer to sandwich said p-type cladding layer for defining a barrier height between said active layer and said p-type contact layer, and at least one p-type cladding layer for relaxing a second spike, said p-type cladding layer being provided between said p-type cladding layer for defining a barrier height and said p-type contact layer; wherein the magnitude of a potential difference between valence band edges of said p-type cladding layer for defining a barrier height and said p-type cladding layer for relaxing the second spike is less than the magnitude of a potential difference between valence band edges of said p-type cladding layer for defining a barrier height and said p-type contact layer.
18. The semiconductor laser device according to claim 17 , wherein said p-type cladding layer for relaxing the second spike has a composition expressed by Al x4 a 1−x4 As (0<x 4 <1), where x 4 decreases in a direction from said p-type cladding layer for defining a barrier height to said p-type contact layer.
19. The semiconductor laser device according to claim 17 , wherein said p-type cladding layer for relaxing the second spike has a composition expressed by (Al x5 Ga 1−x5 ) y3 In 1−y3 P (0<x 5 <1, 0<y 3 <1), where x 5 decreases in a direction from said p-type cladding layer for defining a barrier height to said p-type contact layer.
20. The semiconductor laser device according to claim 14 , further comprising a current blocking layer having a window portion, said current blocking layer being disposed opposite to said active layer to sandwich said p-type cladding layer for defining a barrier height between said active layer and said current blocking layer, and
a buried p-type cladding layer formed to fill in said window portion of said current blocking layer, wherein
a refractive index of said current blocking layer is less than refractive indices of said p-type cladding layer for defining a barrier height and said buried p-type cladding layer.
21. The semiconductor laser device according to claim 20 , wherein said current blocking layer has a composition expressed by Al x6 Ga 1−x6 As (0<x 6 <1), and an etch stop layer of (Al x7 Ga 1−x7 ) y4 In 1−y4 P (0<x 7 <1, 0<y 4 <1) is further provided between said p-type cladding layer for defining a barrier height and said buried cladding layer.
22. The semiconductor laser device according to claim 20 , further comprising a p-type contact layer disposed opposite to said active layer to sandwich said p-type cladding layer for defining a barrier height between said active layer and said p-type contact layer, and
at least one p-type cladding layer for relaxing a second spike, said p-type cladding layer being provided between said buried p-type cladding layer and said p-type contact layer, wherein
the magnitude of a potential difference between valence band edges of said p-type cladding layer for relaxing the second spike and said p-type contact layer is less than the magnitude of a potential difference between valence band edges of said buried p-type cladding layer and said p-type contact layer.
23. The semiconductor laser device according to claim 22 , wherein said p-type cladding layer for relaxing the second spike has a composition expressed by Al x8 Ga 1−x8 As (0<x 8 <1), where x 8 decreases in the direction from said buried p-type cladding layer to said p-type contact layer.
24. The semiconductor laser device according to claim 14 , comprising a Fabry-Perot (FP) resonator cavity.
25. The semiconductor laser device according to claim 14 , comprising a distributed Bragg reflector (DBR) structure.