Granted Patent
Utility
US 6,458,636
· Confirmation No. 1104
METHOD FOR FORMING POLYCRYSTALLINE SILICON LAYER AND METHOD FOR FABRICATING THIN FILM TRANSISTOR
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⬇ PDF
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2005-04-22 | EBCC.AD |
Notice of Change of Address Place in File Wrapper Due to Electronic Business Center(EBC) Customer Number Update | 1 | View | |
| 2001-12-07 | TRNA |
Transmittal of New Application | 2 | View | |
| 2001-12-07 | A.PE |
Preliminary Amendment | 3 | View | |
| 2001-12-07 | SPEC |
Specification | 9 | View | |
| 2001-12-07 | CLM |
Claims | 5 | View | |
| 2001-12-07 | ABST |
Abstract | 1 | View | |
| 2001-12-07 | DRW |
Drawings-only black and white line drawings | 9 | View | |
| 2001-12-07 | OATH |
Oath or Declaration filed | 2 | View |
Inventors
Jong-Hoon Yi
Seoul, KOREA, REPUBLIC OF
Sang-Gul Lee
Seoul, KOREA, REPUBLIC OF
Won-Kyu Park
Sungnam-si, KOREA, REPUBLIC OF
Attorneys & Agents of Record
Classification
USPC
438/150
H10P14/3238
H10D30/6731
H10D30/0321
H10D30/6745
H10D86/00
H10D86/441
H10D86/60
H10D30/6729
H10D30/0314
H10D86/0225
H10D86/0229
H10P14/3456
H10P14/3802
H10P14/3808
H10P14/2922
H10P14/3806
H10P14/3411
Prosecution
- Examiner
- NHU, DAVID
- Art Unit
- 2818
- Customer No.
- 30827
- Docket No.
- 8733.044.10
- Confirmation No.
- 1104
Foreign Priority
1998-34893
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1998-08-27
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REPUBLIC OF KOREA
1999-1125
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1999-01-15
·
REPUBLIC OF KOREA
Publication
- Pub. No.
- US20020042168A1
- Pub. Date
- 2002-04-11
Patent Term Adjustment
0days
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Quick Facts
- Patent No.
- US 6,458,636
- App. No.
- 10/005,124
- Filed
- 2001-12-07
- Granted
- 2002-10-01
- Pub. No.
- US20020042168A1
- Examiner
- NHU, DAVID
- Art Unit
- 2818
- PTA
- 0 days
External Links