Liquid crystal display device substrate and method for manufacturing thereof
View Patent ↗A liquid crystal display according to the present invention uses an organic layer treated with H 2 plasma before fabricating an inorganic layer on the top of the organic layer. When forming thin film transistors (TFT) used in the LCD, an Indium Tin Oxide layer is fabricated above the TFTs and acts as a pixel electrode. When the organic layer, such as a passivation layer, is treated with the H 2 plasma, an intermediate layer having an O—H bonding structure is formed to enhance bonding or attachment of an inorganic layer, such as an ITO layer, to the organic layer.
1. A method for manufacturing a pixel element of a liquid crystal display device, comprising the steps of:
providing a substrate;
forming a first layer with an organic material over the substrate;
treating at least part of the first layer with plasma containing hydrogen to form an intermediate layer having an O—H bonding structure; and
forming a second layer over the intermediate layer.
2. The method of claim 1 , wherein the first layer comprises at least one of Benzocyclobutene (BCB), Flourinated polyimide; Teflon; Cytop and Acrylic Resin.
3. The method of claim 1 , wherein the second layer comprises at least one of indium tin oxide (ITO), silicon nitride (SiNx) and silicon Oxide (SiOx).
4. The method of claim 1 , wherein the first layer includes an organic material and the second layer includes an inorganic material.
5. The method of claim 1 , further comprising a step of treating the surface of the organic layer with plasma containing at least one of oxygen and argon after treating with the plasma containing hydrogen.
6. A method for manufacturing a pixel element of a liquid crystal display device, comprising the steps of:
providing a substrate;
forming a first layer with an organic material over the substrate;
treating at least part of the first layer with plasma containing hydrogen to form an intermediate layer; and
forming a second layer over the intermediate layer;
further comprising a step of forming an additional intermediate layer by treating the first layer with plasma containing at least one of oxygen and argon between the first layer and the intermediate layer.
7. A method for manufacturing a pixel element of a liquid crystal display device, comprising the steps of:
providing a substrate;
forming a first layer with an organic material over the substrate;
treating at least part of the first layer with plasma containing hydrogen to form an intermediate layer; and
forming a second layer over the intermediate layer;
further comprising a step of forming an additional intermediate layer by treating the intermediate layer with plasma containing at least one of oxygen and argon between the intermediate layer and the second layer.
8. A method of manufacturing a liquid crystal display device, comprising the steps of:
providing a substrate;
fabricating a switching element formed on the substrate, the switching element having at least one electrode;
forming an organic layer covering at least part of the substrate having the switching element;
treating at least a portion of the organic layer with plasma containing hydrogen to provide an intermediate layer having an O—H bonding structure;
exposing the at least one electrode of the switching element by removing at least a portion of the organic layer and the intermediate layer covering the electrode; and
forming an inorganic layer connected to the at least one electrode on the intermediate layer.
9. The method of claim 8 , wherein the organic layer comprises at least one of Benzocyclobutene (BCB), Flourinated polymide, Teflon, Cytop and Acrylic Resin.
10. The method of claim 8 , wherein the inorganic layer is a conductive layer.
11. The method of claim 10 , wherein the conductive layer comprises Indium Tin Oxide.
12. The method of claim 10 , wherein the treating the organic layer with plasma containing hydrogen before the contact hole is formed.
13. A method of manufacturing a liquid crystal display device, comprising the steps of:
providing a substrate;
fabricating a switching element formed on the substrate, the switching element having at least one electrode;
forming an organic layer covering at least part of the substrate having the switching element;
treating at least a portion of the organic layer with plasma containing hydrogen to provide an intermediate layer;
exposing the at least one electrode of the switching element by removing at least a portion of the organic layer and the intermediate layer covering the electrode; and
forming an inorganic layer connected to the at least one electrode on the intermediate layer;
wherein the inorganic layer is a conductive layer
further comprising a step of treating the surface of the organic layer with plasma containing at least one of oxygen and argon after treating with plasma containing hydrogen.