Electronic and optical materials
View Patent ↗Epitaxial and reduced grain boundary materials are deposited on substrates for use in electronic and optical applications. A specific material disclosed is epitaxial barium strontium titanate ( 14 ) deposited on the C-plane of sapphire ( 12 ).
1. A material comprising epitaxial Ba x Sr 1-x TiO 3 formed as a layer on the C-plane of a sapphire substrate, wherein x has a value from 0 to 1.
2. The material of claim 1 wherein said layer is between about 100 and about 3000 nanometers thick.
3. The material of claim 1 wherein said layer is between about 300 and about 1000 nanometers thick.
4. The material of claim 1 wherein said Ba x Sr 1-x TiO 3 has a 111 orientation.
5. The material of claim 1 wherein said Ba x Sr 1-x TiO 3 is doped with an ion or ions that change its properties.
6. The material of claim 5 wherein said doping ions comprise cesium and bismuth.
7. The material of claim 1 further comprising conductive electrodes for applying a bias or RF signal to the Ba x Sr 1-x TiO 3 layer.
8. A material comprising epitaxial Ba x Sr 1-x TiO 3 formed as a layer on a sapphire substrate, wherein x has a value from 0.1 to 0.9.
9. The material according to claim 8 wherein x has a value from 0.3 to 0.7.
10. The material according to claim 9 wherein x has a value from 0.4 to 0.6.
11. The material of claim 8 wherein said layer is between about 100 and about 3000 nanometers thick.
12. The material of claim 8 wherein said layer is between about 300 and about 1000 nanometers thick.
13. The material of claim 8 wherein said Ba x Sr 1-x TiO 3 has a 111 orientation.
14. The material of claim 8 wherein said Ba x Sr 1-x TiO 3 is doped with an ion or ions that change its properties.
15. The material of claim 14 wherein said doping ions comprise cesium and bismuth.
16. The material of claim 8 further comprising conductive electrodes for applying a bias or RF signal to the Ba x Sr 1-x TiO 3 layer.