IP Library Granted Patent US 6,455,340
Granted Patent Utility
US 6,455,340 · Confirmation No. 3378

METHOD OF FABRICATING GAN SEMICONDUCTOR STRUCTURES USING LASER-ASSISTED EPITAXIAL LIFTOFF

Patented Case View Patent ↗
⬇ PDF
Code Description Pages PDF
2001-12-21 TRNA Transmittal of New Application 3 View
2001-12-21 SPEC Specification 11 View
2001-12-21 CLM Claims 3 View
2001-12-21 ABST Abstract 1 View
2001-12-21 DRW Drawings-only black and white line drawings 2 View
2001-12-21 OATH Oath or Declaration filed 3 View
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this application's details
Quick Facts
Patent No.
US 6,455,340
App. No.
10/024,236
Filed
2001-12-21
Granted
2002-09-24
Art Unit
2813
PTA
0 days