Granted Patent
Utility
US 6,455,340
· Confirmation No. 3378
METHOD OF FABRICATING GAN SEMICONDUCTOR STRUCTURES USING LASER-ASSISTED EPITAXIAL LIFTOFF
Patented Case
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2001-12-21 | TRNA |
Transmittal of New Application | 3 | View | |
| 2001-12-21 | SPEC |
Specification | 11 | View | |
| 2001-12-21 | CLM |
Claims | 3 | View | |
| 2001-12-21 | ABST |
Abstract | 1 | View | |
| 2001-12-21 | DRW |
Drawings-only black and white line drawings | 2 | View | |
| 2001-12-21 | OATH |
Oath or Declaration filed | 3 | View |
Inventors
Attorneys & Agents of Record
Classification
USPC
438/31
H10H20/862
H10H20/8142
H10H20/018
B82Y20/00
H01S5/0213
H01S5/0215
H01S5/0217
H01S5/18341
H01S5/18369
H01S5/34333
Prosecution
- Examiner
- CHAUDHARI, CHANDRA P
- Art Unit
- 2813
- Docket No.
- D/A1729
- Confirmation No.
- 3378
Patent Term Adjustment
0days
No related applications found.
RELEASE OF SECURITY INTEREST
Recorded 2022-09-07
RELEASE OF SECURITY INTEREST
Recorded 2022-09-07
from
XEROX CORPORATION
SECURITY AGREEMENT
Recorded 2003-10-31
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2001-12-21
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Quick Facts
- Patent No.
- US 6,455,340
- App. No.
- 10/024,236
- Filed
- 2001-12-21
- Granted
- 2002-09-24
- Examiner
- CHAUDHARI, CHANDRA P
- Art Unit
- 2813
- PTA
- 0 days
External Links