IP Library › Granted Patent US 7,095,770
Granted Patent B2
US 7,095,770 · App. 10/026,016 · Granted Aug 22, 2006

Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,095,770
App. No.
10/026,016
Granted
Aug 22, 2006
Kind
B2
Abstract

Quantum wells and associated barriers layers can be grown to include nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., within the 1260 to 1650 nm range. In accordance with features of the present invention, a vertical cavity surface emitting laser (VCSEL) can include at least one quantum well comprised of InGaAsSbN; barrier layers sandwiching said at least one quantum well; and confinement layers sandwiching said barrier layers. Confinement and barrier layers can comprise AlGaAs. Barrier layer, in the alternative, can also comprise GaAsP. Nitrogen can be placed in the quantum wells. Quantum wells can be developed up to and including 50 Å in thickness. Quantum wells can also be developed with a depth of at least 40 meV.

Claims (42)

1. A vertical cavity surface emitting laser (VCSEL), comprising:

an active region comprising at least one compressed quantum well having a depth of at least 40 meV, wherein said depth is defined using the difference between a valence band offset and a conduction band offset, and said at least one quantum well is comprised of InGaAsSbN and includes barrier layers sandwiching said at least one quantum well; and

confinement layers sandwiching said active region.

2. The VCSEL of claim 1 wherein said barrier layers are comprised of GaAsP.

3. The VCSEL of claim 1 wherein said confinement layers are comprised of AlGaAs.

4. The VCSEL of claim 2 wherein said confinement layers are comprised of AlGaAs.

5. The VCSEL of claim 3 wherein said barrier layers are comprised of AIGaAs.

6. The VCSEL of claim 1 wherein said barrier layers are comprised of AlGaAs.

7. The VCSEL of claim 1 wherein said at least one quantum well further comprises >1% N.

8. The VCSEL of claim 7 wherein said barrier layers are comprised of GaAsP.

9. The VCSEL of claim 7 wherein said confinement layers are comprised of A 1 GaAs.

10. The VCSEL of claim 8 wherein said confinement layers are comprised of A 1 GaAs.

11. The VCSEL of claim 7 wherein said barrier layers are comprised of A 1 GaAs.

12. The VCSEL of claim 9 wherein said barrier layers are comprised of A 1 GaAs.

13. The VCSEL of claim 1 wherein said at least one quantum well is up to and including 50 Å in thickness.

14. The VCSEL of claim 13 wherein said barrier layers are comprised of GaAsP.

15. The VCSEL of claim 13 wherein said confinement layers are comprised of A 1 GaAs.

16. The VCSEL of claim 14 wherein said confinement layers are comprised of A 1 GaAs.

17. The VCSEL of claim 13 wherein said barrier layers are comprised of AlGaAs.

18. The VCSEL of claim 13 wherein said barrier layers are comprised of AlGaAs.

19. The VCSEL of claim 1 wherein said at least one quantum well further comprises >1% N.

20. The VCSEL of claim 19 wherein said barrier layers are comprised of GaAsP.

21. The VCSEL of claim 19 wherein said confinement layers are comprised of AIGaAs.

22. The VCSEL of claim 20 wherein said confinement layers are comprised of AlGaAs.

23. The VCSEL of claim 19 wherein said barrier layers are comprised of AlGaAs.

24. The VCSEL of claim 21 wherein said barrier layers are comprised of AlGaAs.

25. A vertical cavity surface emitting laser (VCSEL), comprising:

an active region comprising at least one compressed quantum well having a depth of at least 40 meV, wherein said depth is defined using the difference between a valence band offset and a conduction band offset, and said at least one quantum well is comprised of InGaAsSbN and includes barrier layers sandwiching said at least one quantum well; and AlGaAs confinement layers sandwiching said active region.

26. The VCSEL of claim 25 wherein said barrier layers are comprised of GaAsP.

27. The VCSEL of claim 25 wherein said barrier layers are comprised of AlGaAs.

28. The VCSEL of claim 25 wherein said at least one quantum well further comprises >1% N.

29. The VCSEL of claim 28 wherein said barrier layers are comprised of GaAsP.

30. The VCSEL of claim 28 wherein said barrier layers are comprised of AlGaAs.

31. The VCSEL of claim 25 wherein said quantum well is up to and including 50 Å in thickness.

32. A vertical cavity surface emitting laser (VCSEL), comprising:

an active region comprising at least one compressed quantum well having a well depth of at least 40 meV, wherein said depth is defined using the difference between a valence band offset and a conduction band offset, and said at least one quantum well is comprised of InGaAsSbN and includes barrier layers sandwiching said at least one quantum well; and

AlGaAs confinement layers sandwiching said active region;

wherein said quantum well contains greater than 1% N.

33. The VCSEL of claim 32 wherein said quantum well is up to and including 50 Å in thickness.

34. The VCSEL of claim 1 wherein said barrier layers are in tension.

35. The VCSEL of claim 25 wherein said barrier layers are in tension.

36. The VCSEL of claim 32 wherein said barrier layers are in tension.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 1, 2020
From: FINISAR CORPORATION
To: II-VI DELAWARE, INC.
Reel/Frame 052286/0001 →