IP Library › Granted Patent US 6,922,426
Granted Patent B2
US 6,922,426 · App. 10/026,055 · Granted Jul 26, 2005

Vertical cavity surface emitting laser including indium in the active region

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 6,922,426
App. No.
10/026,055
Granted
Jul 26, 2005
Kind
B2
Abstract

Quantum wells and associated barriers layers can be grown to include nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., within the 1260 to 1650 nm range. In accordance with features of the present invention, a vertical cavity surface emitting laser is described that includes at least one quantum well comprised of InGaAs; GaAsN barrier layers sandwiching said at least one quantum well; and GaAsN confinement layers sandwiching said barrier layers. GaAsN barrier layers sandwiching the quantum well and AlGaAs confinement layers sandwiching the barrier layers can also be provided with a InGaAs quantum well. AlGaAs barrier layers sandwiching the at least one quantum well and GaAsN confinement layers sandwiching the barrier layers can also be provided with a InGaAs quantum well. Quantum wells can be developed up to and including 50 Å in thickness. Quantum wells can also be developed with a depth of at least 40 meV.

Claims (12)

1. A vertical cavity surface emitting laser, comprising:

an active region further comprising at least one quantum well having a depth of at least 40 meV, wherein said depth is defined using the difference between a valence band offset and a conduction band offset, said quantum well being comprised of InGaAs and further including GaAsN barrier layers sandwiching said at least one quantum well; and

GaAsN confinement layers sandwiching said active region.

2. The vertical cavity surface emitting laser of claim 1 wherein said at least one quantum well is up to and including 50 Å in thickness.

3. A vertical cavity surface emitting laser, comprising:

an active region further comprising at least one quantum well having a depth of at least 40 meV, wherein said depth is defined using the difference between a valence band offset and a conduction band offset, said quantum well being comprised of InGaAs and further including GaAsN barrier layers sandwiching said at least one quantum well; and

AIGaAs confinement layers sandwiching said active region.

4. The vertical cavity surface emitting laser of claim 3 wherein said at least one quantum well is up to end including 50 Å in thickness.

5. A vertical cavity surface emitting laser, comprising:

an active region further comprising at least one quantum well having a depth of at least 40 meV, wherein said depth is defined using the difference between a valence band offset and a conduction band offset, said quantum well being comprised of InGaAs and further including AIGaAs barrier layers sandwiching said at least one quantum well; and

GaAsN confinement layers sandwiching said active region.

6 .The vertical cavity surface emitting laser of claim 5 wherein said at least one quantum well is up to and including 50 Å in thickness.