Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method
View Patent ↗To develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured at a low cost. A shade pattern of a photomask is constituted by containing nanoparticles such as carbon in an organic film such as a photoresist film. A pattern is transferred to a photoresist on a semiconductor wafer by means of the reduction projection exposure using the photomask. At the time of the above exposure, it is possible to select exposure light within a range of wide wavelengths including i-line, KrF excimer laser beam, ArF excimer laser beam, or the like.
1. A photomask having, on a glass plate, a shade pattern containing at least nanoparticles, a light-absorption component, and a binder, wherein said nanoparticles in said shade pattern have an exposure-light-scattering characteristic which substantially restricts transmittance of exposure light through the nanoparticles.
2. The photomask according to claim 1 ,
wherein said glass plate has a structure of a phase shifter for partially inverting the phase of exposure light and has, on said phase shifter, the shade pattern containing at least said nanoparticles, said light-absorption component, and the binder.
3. The photomask according to claim 2 ,
wherein said phase shifter is applying-forming glass.
4. The photomask according to claim 2 ,
wherein said phase shifter has such a structure that said glass plate is dented.
5. The photomask according to claim 1 ,
wherein said shade pattern includes a plurality of nanoparticles having different diameters.
6. The photomask according to claim 1 ,
wherein the refractive index of said nanoparticles to exposure light is different from that of said binder.
7. The photomask according to claim 1 ,
wherein said nanoparticles are inorganic matter.
8. The photomask according to claim 1 ,
wherein said nanoparticles are carbon.
9. The photomask according to claim 1 ,
wherein the transmittance of said shade pattern is 16% or less when an exposure wavelength is 100 nm or more and 500 nm or less.
10. The photomask according to claim 1 ,
wherein the transmittance of said shade pattern is 16% or less when an exposure wavelength is 100 nm or more and 700 nm or less.
11. The photomask according to claim 1 ,
wherein the transmittance of said shade pattern is 1% or less when an exposure wavelength is 100 nm or more and 500 nm or less.
12. The photomask according to claim 1 ,
wherein the transmittance of said shade pattern is 1% or less when an exposure wavelength is 100 nm or more and 700 nm or less.
13. The photomask according to claim 1 ,
wherein each diameter of said nanoparticles is 200 nm or less.
14. The photomask according to claim 1 ,
wherein the content of said nanoparticles in said shade pattern is 10 % or more and 99% or less.