Vertical cavity surface emitting laser having a gain guide aperture interior to an oxide confinement layer
View Patent ↗A VCSEL with current confinement achieved by an oxide insulating region and by an ion implant region. An annular shaped oxide layer is formed, and a gain guide ion implant is formed. The ion implant gain guide includes a central region having high conductivity. The VCSEL further includes first and second mirrors that are separated by an optical path of at least one wavelength. Furthermore, the oxide insulating region beneficially has a optical path of less than ¼ wavelength. The ion implanted spatial region is beneficially concentrically aligned with the oxide insulating region.
1. A vertical cavity surface emitting laser for emitting light having a wavelength, comprising:
a substrate;
an active region adjacent said substrate;
a first mirror between said active region and said substrate; and
a second minor adjacent said active region, said active region being between said second mirror and said first mirror; and
an ion implanted spatial region that extends into said active region;
wherein said second mirror includes an oxide insulating region; and
wherein said first mirror and said second mirror are separated by an optical path length or least one wavelength.
2. The vertical cavity surface emitting laser of claim 1 , wherein said active region has at least one quantum well.
3. The vertical cavity surface emitting laser of claim 1 , wherein said oxide insulating region and said ion implanted spatial region confine current flow through a center of said ion implanted spatial region.
4. The vertical cavity surface emitting laser of claim 1 , wherein said ion implanted spatial region is concentrically aligned with said oxide insulating region.
5. The vertical cavity surface emitting laser of claim 1 , wherein said oxide insulating region has an optical path length of less than ¼ wavelength.
6. A vertical cavity surface emitting laser for emitting light having a wavelength, comprising;
a substrate;
an active region adjacent said substrate;
a first minor between said active region and said substrate; and
a second mirror adjacent said active region, said active region being between said second mirror and said first mirror, said second mirror including a high aluminum content layer having an aluminum concentration sufficient for oxidizing the second mirror; and
an ion implanted spatial region that extends into said active region;
wherein said aluminum content layer is oxidized into an oxide insulating region; and
wherein said first mirror and said second mirror are separated by an optical path of at least one wavelength.
7. The vertical cavity surface emitting laser of claim 6 , further including a first spacer between said first mirror and said active region, and a second spacer between said active region and said second mirror.
8. The vertical cavity surface emitting laser of claim 7 , wherein said oxide insulating region extends into said second spacer.
9. The vertical cavity surface emitting laser of claim 6 , wherein said substrate is doped with an n-type dopant.
10. The vertical cavity surface emitting laser of claim 6 , wherein said active region has at least one quantum well.
11. The vertical cavity surface emitting laser of claim 6 , wherein said oxide insulating region and said ion implanted spatial region confine current flow through a center of said ion implanted spatial region.
12. The vertical cavity surface emitting laser of claim 6 , wherein said ion implanted spatial region is concentrically aligned with said oxide insulating region.
13. The vertical cavity surface emitting laser of claim 6 , wherein said oxide insulating region has an optical path length of less than ¼ wavelength.