Liquid crystal display device and method of manufacturing the same
View Patent ↗A method of manufacturing an LCD device is disclosed, which can improve yield by preventing occurrence of a contact failure between a transparent conductive film and a pad region (gate and data regions). In this method, amorphous transparent conductive films connected to a drain electrode, a gate pad and a data pad are formed of a transparent conductive material.
1. An LCD device comprising:
a substrate;
a TFT having a gate electrode and source/drain electrodes on the substrate;
a passivation film formed on an entire surface of the substrate and having a contact hole in the drain electrode of the TFT; and
a pixel electrode made of an amorphous transparent conductive film of sufficient thickness to prevent a generation of a galvanic effect, and connected to the drain electrode through the contact hole, the drain electrode having a single-layer structure.
2. The LCD device as claimed in claim 1 , wherein the pixel electrode is formed of ITO in which H 2 O is added.
3. The LCD device as claimed in claim 1 , wherein the pixel electrode is formed of ITO in which H 2 is added.
4. The LCD device as claimed in claim 1 , wherein the pixel electrode is formed of ITO produced at a predetermined temperature.
5. The LCD device as claimed in claim 1 , wherein the pixel electrode is formed of any one of amorphous IZO and amorphous ITZO.
6. The LCD device as claimed in claim 1 , wherein the pixel electrode has a thickness of approximately 500 Å to 2000 Å.
7. The LCD device as claimed in claim 1 , wherein the pixel electrode is formed of a polycrystal transparent conductive film having a thickness of above 500Å to 2500 Å.
8. A pad structure of an LCD device, comprising:
a substrate:
a metal film formed on the substrate and functioning as a pad for the LCD device; and
an amorphous transparent conductive film of sufficient thickness to prevent a generation of a galvanic effect, and formed on the metal film,
wherein the metal film is formed of a same material as a gate line or a data line.
9. The pad structure as claimed in claim 8 , wherein the amorphous transparent conductive film is formed of ITO in which H 2 O is added.
10. The pad structure as claimed in claim 8 , wherein the amorphous transparent conductive film is formed of ITO in which H 2 is added.
11. The pad structure as claimed in claim 8 , wherein the amorphous transparent conductive film is formed of ITO produced at a predetermined temperature.
12. The pad structure as claimed in claim 8 , wherein the amorphous transparent conductive film is formed of any one of amorphous IZO and amorphous ITZO.
13. The pad structure as claimed in claim 8 , wherein the metal film has a single-layer structure.
14. The pad structure as claimed in claim 8 , wherein the amorphous transparent conductive film has a thickness of approximately 500 Å and 2000 Å.
15. The pad structure as claimed in claim 8 , wherein a polycrystal transparent conductive film having a thickness of above 500 Å to 2500 Å is formed instead of the amorphous transparent conductive film.
16. A method for manufacturing an LCD device, comprising the steps of:
forming a gate line including a gate electrode and a gate pad on a substrate;
forming a gate insulating film on an entire surface of the substrate;
forming a semiconductor film above the gate electrode;
forming a data line including a data pad to form source and drain electrodes of a TFT at both sides above the semiconductor film;
forming a passivation film on the entire surface of the substrate;
forming contact holes in the drain electrode, the gate pad and the data pad of the TFT; and
forming, in each pixel region, amorphous transparent conductive films of sufficient thickness to prevent a generation of a galvanic effect, and connected to the drain electrode, the gate pad and the data pad through the contact holes,
wherein at least one of the drain electrode, the gate pad and the data pad has a single-layer structure.
17. The method as claimed in claim 16 , wherein at least one of the amorphous transparent conductive films is formed of ITO in which H 2 O is added.
18. The method as claimed in claim 16 , wherein at least one of the amorphous transparent conductive films is formed of ITO in which H 2 is added.
19. The method as claimed in claim 16 , wherein at least one of the amorphous transparent conductive films is formed of ITO produced at a predetermined temperature.
20. The method as claimed in claim 16 , wherein at least one of the amorphous transparent conductive films is formed of any one of amorphous IZO and amorphous ITZO.
21. The method as claimed in claim 16 , further comprising the step of:
performing a thermal process to at least one of the amorphous transparent conductive films at a temperature of around 150° to 350°.
22. The method as claimed in claim 16 , wherein at least one of the amorphous transparent conductive films is formed at a thickness of approximately 500 Å to 2000Å.
23. The method as claimed in claim 16 , wherein a polycrystal transparent conductive film having a thickness of above 500 Å and 2500 Å is formed instead of at least one of the amorphous transparent conductive films.
24. An LCD device comprising:
a substrate;
a TFT having a gate electrode and source/drain electrodes on the substrate;
a passivation film formed on an entire surface of the substrate and having a contact hole in the drain electrode of the TFT; and
a pixel electrode made of a polycrystalline transparent conductive film of sufficient thickness to prevent generation of a galvanic effect by a stripper, and connected to the drain electrode through the contact hole, the drain electrode having a single-layer structure.
25. A pad structure of an LCD device, comprising:
a substrate;
a metal film formed on the substrate and functioning as a pad for the LCD device; and
a polycrystalline transparent conductive film having a thickness sufficient to prevent generation of a galvanic effect by a stripper, and formed on the metal film,
wherein the metal film is formed of a same material as a gate line or a data line.
26. A method for manufacturing an LCD device, comprising the steps of:
forming a gate line including a gate electrode and a gate pad on a substrate;
forming a gate insulating film on an entire surface of the substrate;
forming a semiconductor film above the gate electrode;
forming a data line including a data pad to form source and drain electrodes of a TFT at both sides above the semiconductor film;
forming a passivation film on the entire surface of the substrate;
forming contact holes in the drain electrode, the gate pad and the data pad of the TFT; and
forming, in each pixel region, polycrystalline transparent conductive films of sufficient thickness to prevent generation of a galvanic effect by a stripper, and connected to the drain electrode, the gate pad and the data pad through the contact holes,
wherein at least one of the drain electrode, the gate pad and the data pad has a single-layer structure.