High frequency integrated circuit using capacitive bonding
View Patent ↗A high frequency integrated circuit includes a die, a package and capacitive bond. The die includes a circuit that processes a high frequency signal and also includes at least one bonding pad coupled to the circuit. The package includes a plurality of bonding posts, at least one of the bonding posts is allocated to the at least one bond pad of the die. A bonding capacitor couples the at least one bond pad on the die to the at least one bond post of the package.
1. A high frequency integrated circuit comprises:
die that includes a circuit that processes a high frequency signal and at least one bond pad operably coupled to the circuit;
package that includes a plurality of bond posts, wherein at least one of the plurality of bond posts is allocated to the at least one bond pad; and
capacitor having a first plate, a second plate, and a dielectric positioned between the first and second plates, wherein the first plate is electrically coupled to and in direct physical contact with, the at least one bond pad and the second plate is electrically coupled to, and in direct physical contact with, the at least one of the plurality of bond posts.
2. The high frequency integrated circuit of claim 1 , wherein the circuit further comprises:
radio transmitter module operably coupled to convert a baseband signal into a radio frequency signal; and
power amplifier operably coupled to amplify the radio frequency signal to produce an amplified radio frequency signal and to provide the amplified radio frequency signal to the at least one bond pad.
3. The high frequency integrated circuit of claim 1 , wherein the circuit further comprises:
low noise amplifier operably coupled to receive radio frequency signal via the at least one bond pad and to amplify the radio frequency signal to produce an amplified radio frequency signal; and
radio receiver module operably coupled to convert the amplified radio frequency signal into a baseband signal.
4. The high frequency integrated circuit of claim 1 further comprises:
bond wire operably coupled to the at least one of the plurality of bond posts and to a ground bond pad of the die, wherein inductance of the bond wire in parallel with capacitance of the capacitor form at least a portion of an impedance transformation circuit.
5. The high frequency integrated circuit of claim 1 further comprises:
bond wire operably coupled to the at least one of the plurality of bond posts and to the at least one bond pad such that inductance of the bond wire and capacitance of the capacitor form a tank circuit.
6. The high frequency integrated circuit of claim 1 further comprises:
series capacitor operably coupled between an output of the circuit and the at least one bond pad; and
bond wire operably coupled between the at least one bond pad and a ground bond pad of the die.
7. The high frequency integrated circuit of claim 1 , wherein the at least one bond pad and the at least one of the plurality bond posts each comprises at least one of:
gold contact and aluminum contact.
8. A high frequency integrated circuit comprises:
die that includes a circuit that processes a high frequency signal and at least one bond pad operably coupled to the circuit;
package that includes a plurality of bond posts, wherein at least one of the plurality of bond posts is allocated to the at least one bond pad; and
dielectric positioned between the at least one bond pad and the at least one of the plurality of bond posts to form a bond capacitor that is bonded to the at least one of the plurality of bond posts and that electrically couples the circuit to the at least one of the plurality of bond posts, eliminating the need for a bond wire connection between the at least one bond pad and the at least one of the plurality of bond posts.
9. The high frequency integrated circuit of claim 8 , wherein the circuit further comprises:
radio transmitter module operably coupled to convert a baseband signal into a radio frequency signal; and
power amplifier operably coupled to amplify the radio frequency signal to produce an amplified radio frequency signal and to provide the amplified radio frequency signal to the at least one bond pad.
10. The high frequency integrated circuit of claim 8 , wherein the circuit further comprises:
low noise amplifier operably coupled to receive radio frequency signal via the at least one bond pad and to amplify the radio frequency signal to produce an amplified radio frequency signal; and
radio receiver module operably coupled to convert the amplified radio frequency signal into a baseband signal.
11. The high frequency integrated circuit of claim 8 further comprises:
bond wire operably coupled to the at least one of the plurality of bond posts and to a ground bond pad of the die, wherein inductance of the bond wire in parallel with capacitance of the bond capacitor form at least a portion of an impedance transformation circuit.
12. The high frequency integrated circuit of claim 8 further comprises:
bond wire operably coupled to the at least one of the plurality of bond posts and to the at least one bond pad such that inductance of the bond wire and capacitance of the bond capacitor form a tank circuit.
13. The high frequency integrated circuit of claim 8 further comprises:
series capacitor operably coupled between an output of the circuit and the at least one bond pad; and
bond wire operably coupled between the at least one bond pad and a ground bond pad of the die.