Method for reconstructing an integrated circuit package using lapping
A method is provided for reconstructing an integrated circuit package comprising: attaching a die to exposed wire bond pads of a lead frame so that the die is electrically connected to the lead frame; and encapsulating the die and the wire bond pads in an encapsulant; and reshaping an upper surface of the encapsulant where at least a portion of the encapsulant reshaping is performed by a lapping process.
1. A method for reconstructing an integrated circuit package comprising:
deconstructing an integrated circuit package for exposing a wire bond pad and a lead frame located therein;
attaching a die to the wire bond pad so that the die is electrically connected to the lead frame;
encapsulating the die and the wire bond pad in an encapsulant to form a first encapsulated package;
providing a second encapsulated package that is encapsulated separately from the first encapsulated package; and
reshaping the first encapsulated package and the second encapsulated package at the same time by using a lapping process, wherein the lapping process is performed using a planar abrasive surface sufficiently large to permit the first encapsulant and the second encapsulant to be lapped at the same time.
2. A method according to claim 1 , wherein lapping is performed by an abrasive or ablative lapping process.
3. A method according to claim 1 , wherein lapping is performed by a mechanical, chemical, or electromagnetic lapping process.
4. A method according to claim 1 , wherein encapsulating the die and the wire bond pad results in the encapsulant having a convex or concave upper surface, and reshaping the encapsulant results in the encapsulant having a planar upper surface.
5. A method according to claim 1 , further comprising marking the reshaped upper surface of the encapsulant.
6. A method according to claim 1 , wherein the reshaped upper surface of the encapsulant is sufficiently flat to permit labeling by printing, photolithographic or mechanical marking techniques to simulate a production transfer molded encapsulated IC package, the method further comprising marking the reshaped upper surface of the encapsulant.
7. A method according to claim 1 , wherein the lapping process is performed in conjunction with using a laser or another source of electromagnetic radiation.
8. A method according to claim 1 , wherein the lapping process comprises using a planar abrasive surface.
9. A method according to claim 1 , wherein the lapping process comprises using a planar abrasive surface attached to a wheel or belt.
10. A method according to claim 1 , wherein the lapping process is performed in conjunction with chemical etching.
11. A method according to claim 1 , wherein the lapping process is performed in conjunction with using a gas-jet or liquid-jet containing a particular material.
12. A method according to claim 1 , wherein the lapping process is performed via a mechanical grind.
13. A method according to claim 1 , wherein the lapping process is performed using a combination of mechanical and chemical ablation.
14. A method according to claim 1 , wherein the lapping process is performed using a combination of mechanical and electromagnetic ablation.
15. A method according to claim 1 , wherein the lapping process is performed in conjunction with using laser ablation.
16. A method according to claim 1 , wherein the lapping process is performed using a combination of electromagnetic and chemical ablation.
17. A method according to claim 1 , wherein the lapping process is performed in conjunction with impinging an ultra-fine particulate using a high pressure gas-jet against the material to be lapped.
18. A method according to claim 1 , wherein the lapping process is performed in conjunction with impinging an ultra-fine particulate under high pressure against the material to be lapped.
19. A method according to claim 1 , wherein the lapping process is performed in conjunction with delivering a pulsating liquid-jet under high pressure against the material to be lapped.
20. A method according to claim 1 , wherein the lapping process is performed in conjunction with plasma etching.
21. A method according to claim 1 , wherein the lapping process is performed in conjunction with using a pressurized liquid against the material to be lapped.