Method for making thin film filter having a negative temperature drift coefficient
View Patent ↗A method for making thin film filters having a negative temperature drift coefficient are the subject of the present invention. Such filters can achieve better optical control within an operational temperature range from −5° C. to 70° C. degrees. A first embodiment of the present invention includes: 1. providing a substrate wafer which has a coefficient of thermal expansion (CTE) greater than that of a selected film stack material; 2. polishing the substrate wafer; 3. depositing thin film layers made of the film stack material on the substrate wafer at a temperature substantially higher than room temperature; 4. cooling the substrate-film stack laminate to room temperature, thus forming a convex-shaped laminate; 5. cutting the cooled laminate into pieces. A second embodiment includes the steps of: 1. providing a laminate composed of a glass substrate and a film stack; 2. using at least one ion beam source to bombard the film stack of the laminate with high energy ions; 3. cutting the bombarded laminate into pieces.
1. A method for making a thin film filter having a negative temperature drift coefficient, comprising the steps of:
providing a film stack material;
providing a substrate wafer which has a coefficient of thermal expansion greater than that of the film stack material;
polishing the substrate wafer;
depositing thin film layers made of the film stack material on the substrate wafer at a temperature substantially higher than room temperature, thereby creating a film stack on the substrate wafer;
cooling the substrate wafer-film stack laminate to room temperature; and
cutting the cooled substrate wafer-film stack laminate into pieces,
wherein the coefficient of thermal expansion of the substrate wafer is within the range from 10×10 −6 /° K to 20×10 −6 /° K, and the substrate is made of a SiO 2 —Na 2 O—K 2 O—Li 2 O—PbO—XO 2 system, wherein X can be titanium (Ti) or zirconium (Zr).
2. A method for making a thin film filter having a negative temperature drift coefficient, comprising the steps of:
providing a film stack material;
providing a substrate wafer which has a coefficient of thermal expansion greater than that of the film stack material;
polishing the substrate wafer;
depositing thin film layers made of the film stack material on the substrate wafer at a temperature substantially higher than room temperature, thereby creating a film stack on the substrate wafer;
cooling the substrate wafer-film stack laminate to room temperature; and
cutting the cooled substrate wafer-film stack laminate into pieces,
wherein the coefficient of thermal expansion of the substrate wafer is within the range from 10×10 −6 /° K to 20×10 −6 /° K, and the substrate is made of a SiO 2 —Na 2 O—K 2 O—Li 2 O—PbO—Q 2 O 3 system wherein Q can be aluminum (Al).
3. A method for making a thin film filter having a negative temperature drift coefficient, comprising the steps of:
providing a film stack material;
providing a substrate wafer which has a coefficient of thermal expansion greater than that of the film stack material;
polishing the substrate wafer;
depositing thin film layers made of the film stack material on the substrate wafer at a temperature substantially higher than room temperature, thereby creating a film stack an the substrate wafer;
cooling the substrate wafer-film stack laminate to room temperature; and
cutting the cooled substrate wafer-film stack laminate into pieces,
wherein the coefficient of thermal expansion of the substrate wafer is within the range from 10×10 −6 /° K to 20×10 −6 /° K, and the substrate is made of a SiO 2 —Na 2 O—K 2 O—Li 2 O—P 2 O 5 —ZO 2 system, wherein Z can be titanium (Ti) or zirconium (Zr).