IP Library › Granted Patent US 6,680,236
Granted Patent Utility
US 6,680,236 · Confirmation No. 9696

ION-IMPLANTATION AND SHALLOW ETCHING TO PRODUCE EFFECTIVE EDGE TERMINATION IN HIGH-VOLTAGE HETEROJUNCTION BIPOLAR TRANSISTORS

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2012-11-16 N570 Communication - Re: Power of Attorney (PTOL-308) 1 View
2012-11-16 N570 Communication - Re: Power of Attorney (PTOL-308) 1 View
2012-11-04 PA.. Power of Attorney 1 View
2012-11-04 LET. Miscellaneous Incoming Letter 1 View
2012-11-04 N417 Electronic Filing System Acknowledgment Receipt 2 View
2012-11-04 R3.73 Assignee showing of ownership per 37 CFR 3.73 2 View
2003-08-08 IFEE Issue Fee Payment (PTO-85B) 1 View
2003-08-08 C.AD Change of Address 1 View
2003-08-04 LET. Miscellaneous Incoming Letter 2 View
2003-08-04 IDS Information Disclosure Statement (IDS) Form (SB08) 3 View
2003-08-04 C.AD Change of Address 1 View
2002-01-11 TRNA Transmittal of New Application 3 View
2002-01-11 SPEC Specification 9 View
2002-01-11 CLM Claims 3 View
2002-01-11 ABST Abstract 1 View
2002-01-11 DRW Drawings-only black and white line drawings 3 View
2002-01-11 OATH Oath or Declaration filed 3 View
2002-01-11 LET. Miscellaneous Incoming Letter 1 View
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Quick Facts
Patent No.
US 6,680,236
App. No.
10/044,689
Filed
2002-01-11
Granted
2004-01-20
Pub. No.
US20030134482A1
Examiner
VU, DAVID
Art Unit
2818
PTA
0 days