IP Library › Granted Patent US 6,887,626
Granted Patent B2
US 6,887,626 · App. 10/055,689 · Granted May 3, 2005

Electron beam projection mask

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Quick Facts
Patent No.
US 6,887,626
App. No.
10/055,689
Granted
May 3, 2005
Kind
B2
Abstract

The batch projection regions and of an electron beam projection mask are arranged so that pattern density may be equalized on the whole wafer surface.

Claims (10)

1. An electron beam projection mask for use in forming a plurality of high density and low density batch projection regions on a semiconductor substrate so that pattern density may be equalized all over said semiconductor substrate,

wherein said high density and low density batch projections are equal in area.

2. An electron beam projection mask according to claim 1 , wherein the mask is a stencil type mask.

3. An electron beam projection mask according to claim 1 , wherein the mask is a membrane type mask.

4. An electron beam projection mask according to claim 1 , wherein the mask is a partial batch electron beam projection mask.

5. An electron beam projection mask according to claim 2 , wherein the mask is a partial batch electron beam projection mask.

6. An electron beam projection mask according to claim 3 , wherein the mask is a partial batch electron beam projection mask.

7. An electron beam projection mask as claimed in claim 1 , wherein the mask is an electron beam projection lithography mask.

8. An electron beam projection mask as claimed in claim 2 , wherein the mask is an electron beam projection lithography mask.

9. An electron beam projection mask as claimed in claim 3 , wherein the mask is an electron beam projection lithography mask.