Liquid crystal display device and manufacturing method therefor

1. A liquid crystal display device comprising:

transistors disposed at the intersections of gate lines and source lines;

pixel electrodes connected with the transistors;

opposite electrodes opposite to these pixel electrodes; and

liquid crystal held between said opposite electrodes and said pixel electrodes,

wherein said pixel electrodes comprise a first pixel electrode and a second pixel electrode disposed in a layer above an insulating film which is itself disposed in a layer above the first pixel electrode, and having a region that does not overlap with the first pixel electrode, and

wherein the first pixel electrode and second pixel electrode are electrically connected, the first pixel electrode applying a first electric field to the liquid crystal, and the second pixel electrode applying a second electric field whose strength is different from the first electric field to the liquid crystal, and

wherein a ratio of a first voltage applied to the liquid crystal by the first pixel electrode and a second voltage applied to the liquid crystal by the second pixel electrode is 0.5:1.0 to 0.9:1.0.

2. The liquid crystal display device, according to claim 1 , wherein the cumulative capacitance for stabilizing the pixel potential during the holding period is formed between said second pixel electrode and a storage capacitance electrode line or between the second pixel electrode and the preceding gate line adjacent thereto.

3. The liquid crystal display device, according to claim 1 , wherein said first pixel electrode is disposed in the same layer as the gate line.

4. The liquid crystal display device, according to claim 1 , wherein an insulating film is disposed in the layer below said gate line, and said first pixel electrode is disposed in the layer below said insulating film.

5. The active matrix liquid crystal display device, according to claim 1 ,

wherein a first gate insulating film is disposed in the layer above said gate line, said first pixel electrode is disposed in the layer above the first gate insulating film, a second gate insulating film is disposed in the layer above the first pixel electrode, an interlayer insulating film is disposed in the layer above the second gate insulating film, and said second pixel electrode is disposed in the layer above the interlayer insulating film.

6. The liquid crystal display device, according to claim 1 , wherein said first pixel electrode is disposed in the same layer as the drain lines of said transistors.

7. The liquid crystal display device, according to claim 6 , wherein said first pixel electrode is directly connected to the drain electrode of said transistors.

8. The liquid crystal display device, according to claim 1 , wherein said second pixel electrode comprises an opening in the central portion of said second pixel electrode, and said insulating film and said liquid crystal are held between said first pixel electrode and opposite electrode in that opening.

9. A liquid crystal display device comprising:

transistors disposed at the intersections of gate lines and source lines;

pixel electrodes connected with the drain electrodes of the transistors;

opposite electrodes opposite to these pixel electrodes; and

liquid crystal held between said opposite electrodes and said pixel electrodes,

wherein said pixel electrodes comprise a first pixel electrode and a second pixel electrode disposed in a layer above an insulating layer which is itself disposed in a layer above the first pixel electrode, and having a region that does not overlap with the first pixel electrode, and

wherein the first pixel electrode and second pixel electrode are electrically connected with said drain electrode, the first pixel electrode applying first electric field to the liquid crystal, and the second pixel electrode applying a second electric field whose strength is different from the first electric field to the liquid crystal, and

wherein a ratio of a first voltage applied to the liquid crystal by the first pixel electrode and a second voltage applied to the liquid crystal by the second pixel electrode is 0.5:1.0 to 0.9:1.0.

10. The liquid crystal display device, according to claim 1 or 9 , wherein the thickness of said insulating layer is 500 nm or greater.

11. The liquid crystal display device, according to claim 1 or 9 , wherein said pixel electrode is a transparent electrode.

12. A method for manufacturing a liquid crystal display device having transistors disposed at the intersections of gate lines and source lines, pixel electrodes connected with the transistors, opposite electrodes opposite to these pixel electrodes, and liquid crystal held between said opposite electrodes and said pixel electrodes, wherein said method comprises:

a step for manufacturing a first pixel electrode applying a first electric field to the liquid crystal;

a step for manufacturing an insulating layer in a layer above the first pixel electrode;

a step for manufacturing a second pixel electrode in a layer further above the insulating layer, said second pixel electrode having a region that does not overlap the first pixel electrode, and being electrically connected with the first pixel electrode and applying a second electric field whose strength is different from the first electric field to the liquid crystal, wherein a ratio of the voltages applied to said liquid crystal by said first pixel electrode and said second pixel electrode is 0.5:1.0 to 0.9:1.0.

13. A method for manufacturing a liquid crystal display device having transistors disposed at the intersections of gate lines and source lines, pixel electrodes connected with the drain electrodes of the transistors, opposite electrodes opposite to these pixel electrodes, and liquid crystal held between said opposite electrodes and said pixel electrodes, wherein said method comprises:

a step for manufacturing a first pixel electrode electrically connected with said drain electrode and applying a first electric field to the liquid crystal;

a step for manufacturing an insulating layer in a layer above the first pixel electrode; and

a step for manufacturing a second pixel electrode in a layer further above the insulating layer, said second pixel electrode having a region that does not overlap the first pixel electrode, and being electrically connected with said drain electrode and applying a second electric field whose strength is different from the first electric field applied to the liquid crystal, wherein a ratio of the voltages applied to said liquid crystal by said first pixel electrode and said second pixel electrode is 0.5:1.0 to 0.9:1.0.

14. The liquid crystal display device according to claim 1 , wherein the cumulative capacitance for stabilizing the pixel potential during the holding period is formed between said second pixel electrode and a storage capacitance electrode line, and between the second pixel electrode and the preceding gate line adjacent thereto.