III-nitride light emitting diode
View Patent ↗The present invention, a III-nitride light emitting diode (LED) and a manufacture method thereof, forms a magnetic metal layer in a conventional III-nitride LED by the method of thermal evaporation, e-beam evaporation, ion sputtering, or electroplate. Due to the eddy current effect, heat is generated by using electromagnetic oven inducing with electromagnetic wave to activate the p-type semiconductor material in III-nitride LED. The present invention has advantages of providing the equipments of simple structure and low cost. The contact resistance between the semiconductors and electrodes is reduced while the III-nitride compound semiconductor material is activated.
1. A III-nitride LED, comprising:
a substrate;
an epitaxial structure having a plurality of III-nitride compound semiconductor layers used for generating light when current enters, wherein one side of the epitaxial structure is connected to one side of the substrate, a first ohmic contact metal electrode is located on the other side of the epitaxial structure, and the III-nitride compound semiconductor layers comprises at least one heat activated p-type III-nitride compound semiconductor layer; and
an eddy current activated magnetic metal layer located on the other side of the substrate, for activating the III-nitride compound semiconductor layers in a heating step with an eddy current effect induced by electromagnetic wave, wherein the at least one heat activated p-type III-nitride compound semiconductor layer is formed in the heating step.
2. The III-nitride LED according to claim 1 , wherein the substrate is composed of the material selected from a group consisting of sapphire, SiC, GaAs, and silicon.
3. The III-nitride LED according to claim 1 , wherein the eddy current activated magnetic metal layer is composed of the material selected from a group consisting of Fe, Co, V, Ni and alloy thereof.
4. The III-nitride LED according to claim 1 , wherein the eddy current activated magnetic metal layer is a second ohmic contact metal electrode, which has low metal-semiconductor contact resistance with the substrate having characteristics of high doping and high-conductivity.
5. The III-nitride LED according to claim 1 , wherein the eddy current activated magnetic metal layer is located on another side of the substrate.
6. The III-nitride LED according to claim 1 , wherein the epitaxial structure comprises a semiconductor layer having a first electrical property, and the semiconductor layer having the first electrical property is composed of (Al x Ga 1-x ) y In 1-y N (0≦x≦1; 0≦y≦1).
7. The III-nitride LED according to claim 6 , wherein the structure further comprises a trench located on the other side of the epitaxial structure, in order to expose a portion of a surface of the semiconductor layer having the first electrical property, and a second ohmic contact metal electrode located on the portion of the surface of the semiconductor layer having the first electrical property.
8. The III-nitride LED according to claim 1 , wherein the epitaxial structure comprises a buffer layer, and the buffer layer is composed of the material selected from a group consisting of AlN and GaN.
9. The III-nitride LED according to claim 1 , wherein the epitaxial structure comprises a first confining layer having the first electrical property, and the first confining layer having the first electrical property is composed of (Al x Ga 1-x ) y In 1-y N (0≦x≦1; 0≦y≦1).
10. The III-nitride LED according to claim 1 , wherein the epitaxial structure comprises an active layer, and the active layer is composed of the material selected from a group consisting of a double hetero-junction structure and a quantum well of (Al x Ga 1-x ) y In 1-y N (0≦x≦1; 0≦y≦1).
11. The III-nitride LED according to claim 1 , wherein the epitaxial structure comprises a second confining layer having a second electrical property, and the second confining layer is composed of (Al x Ga 1-x ) y In 1-y N (0≦x≦1; 0≦y≦1).
12. The III-nitride LED according to claim 1 , wherein the epitaxial structure comprises a contact layer having the second electrical property, and the contact layer having the second electrical property is composed of (Al x Ga 1-x ) y In 1-y N (0≦x≦1; 0≦y≦1).
13. A method of manufacturing III-nitride LED, comprising:
providing a substrate;
providing an epitaxial structure having a plurality of III-nitride compound semiconductor layers used for generating light when current enters, wherein one side of the epitaxial structure is connected to one side of the substrate, and the III-nitride compound semiconductor layers comprises at least one p-type III-nitride compound semiconductor layer;
forming a first ohmic contact metal electrode located on the other side of the epitaxial structure;
providing a magnetic metal layer on the other side of the substrate; and
heating the magnetic metal layer with an eddy current effect induced by electromagnetic wave for activating the at least one p-type III-nitride compound semiconductor layer of the III-nitride compound semiconductor layers.
14. The method of manufacturing III-nitride LED according to claim 13 , wherein the substrate is composed of the material selected from a group consisting of sapphire, SiC, GaAs, and silicon.
15. The method of manufacturing III-nitride LED according to claim 13 , wherein the magnetic metal is formed by the method selected from a group consisting of thermal evaporation, e-beam evaporation, ion sputtering, and electroplate.
16. The method of manufacturing III-nitride LED according to claim 13 , wherein the magnetic metal layer is composed of the material selected from a group consisting of Fe, Co, V, Ni and alloy thereof.
17. The method of manufacturing III-nitride LED according to claim 13 , wherein the magnetic metal layer is a second ohmic contact metal electrode, which has low metal-semiconductor contact resistance with the substrate having characteristics of high doping and high conductivity.
18. The method of manufacturing III-nitride LED according to claim 13 , wherein the magnetic metal layer is located on another side of the substrate.
19. The method of manufacturing III-nitride LED according to claim 13 , wherein the epitaxial structure comprises a semiconductor layer having a first electrical property, and the semiconductor layer having the first electrical property is composed of (Al x Ga 1-x ) y In 1-y N (0≦x≦1; 0≦y≦1).
20. The method of manufacturing III-nitride LED according to claim 19 , wherein the structure further comprises a trench located on the other side of the epitaxial structure, in order to expose a portion of a surface of the semiconductor layer having the first electrical property, and a second ohmic contact metal electrode located on the portion of the surface of the semiconductor layer having the first electrical property.
21. The method of manufacturing III-nitride LED according to claim 13 , wherein the epitaxial structure comprises a buffer layer, and the buffer layer is composed of the material selected from a group consisting of AlN and GaN.
22. The method of manufacturing III-nitride LED according to claim 13 , wherein the epitaxial structure comprises a first confining layer having the first electrical property, and the first confining layer having the first electrical property is composed of (Al x Ga 1-x ) y In 1-y N (0≦x≦1; 0≦y≦1).
23. The method of manufacturing III-nitride LED according to claim 13 , wherein the epitaxial structure comprises an active layer, and the active layer is composed of the material selected from a group consisting of a double hetero-junction structure and a quantum well of (Al x Ga 1-x ) y In 1-y N (0≦x≦1; 0≦y≦1).
24. The method of manufacturing III-nitride LED according to claim 13 , wherein the epitaxial structure comprises a second confining layer having a second electrical property, and the second confining layer having the second electrical property is composed of (Al x Ga 1-x ) y In 1-y N (0≦x≦1; 0≦y≦1).
25. The method of manufacturing III-nitride LED according to claim 13 , wherein the epitaxial structure comprises a contact layer having the second electrical property, and the contact layer having the second electrical property is composed of (Al x Ga 1-x ) y In 1-y N (0≦x≦1; 0≦y≦1).