Method for depositing thin film using plasma chemical vapor deposition
View Patent ↗A thin film deposition method using plasma enhanced chemical vapor deposition is described. In a plasma enhanced chemical vapor deposition chamber, plasma is used to enhance the chemical reaction to form a thin film on a substrate. The substrate is then removed, followed by passing a cleaning gas into the chamber to remove residues in the chamber. Before loading another batch of substrate in the chamber, a pre-deposition process is performed to isolate contaminants generated from the cleaning process. A discharge plasma treatment is then conducted to lower the amount of accumulated electrical charges.
1. A method for a deposition of a thin film using a plasma enhanced chemical vapor deposition process, applicable in the deposition of the thin film on a substrate placed in a chamber, the method comprising:
a. performing the plasma enhanced chemical vapor deposition process to form the thin film on the substrate;
b. removing the substrate from the chamber;
c. performing a cleaning process in the chamber without the substrate;
d. performing a pre-deposition process to isolate contaminants;
e. performing a discharge plasma treatment for reducing accumulated charges in the chamber;
f. loading another batch of substrate into the chamber; and
g. repeating step a, to step f, wherein the step c to the step e are conducted sequentially.
2. The method of claim 1 , wherein performing the cleaning process includes passing a cleaning gas into the chamber.
3. The method of claim 2 , wherein passing the cleaning gas into the chamber includes passing a fluorine-based cleaning gas.
4. The method of claim 3 , wherein passing the fluorine-based cleaning gas includes passing a NF 3 gas.
5. The method of claim 1 , wherein depositing the thin film includes depositing an insulation material layer.
6. The method of claim 5 , wherein depositing the thin film includes depositing a high resistance thin film.
7. The method of claim 6 , wherein depositing the high resistance thin film includes depositing intrinsic amorphous silicon.
8. The method of claim 1 , wherein a gas used in the discharge plasma treatment includes a hydrogen gas.
9. The method of claim 8 , wherein a gas used in the discharge plasma treatment includes a nitrogen gas.
10. The method of claim 1 , wherein a gas used in the discharge plasma treatment includes an argon gas.
11. The method of claim 1 , wherein a gas used in the discharge plasma treatment includes a helium gas.
12. The method of claim 1 , wherein a gas used in the discharge plasma treatment is selected from the group consisting of a hydrogen gas, a nitrogen gas, an argon gas and a helium gas.
13. A method for a thin film deposition using a plasma enhanced chemical vapor deposition (PECVD) process, the method comprising sequentially:
performing a plasma enhanced chemical vapor deposition (PECVD) in a chamber to form a thin film on a first batch of substrate;
removing the first batch of substrate from the chamber;
performing a cleaning process on the chamber;
performing a pre-deposition process on the chamber to isolate contaminants;
performing a discharge plasma treatment of the chamber for reducing accumulated charges in the chamber;
placing a second batch of substrate into the chamber; and
performing the plasma enhanced chemical vapor deposition to form the thin film on the second batch of substrate.
14. The method of claim 13 , wherein performing the cleaning process includes passing a cleaning gas into the chamber.
15. The method of claim 14 , wherein passing the cleaning gas into the chamber includes passing a fluorine-based cleaning gas.
16. The method of claim 15 , wherein passing the fluorine-based cleaning gas includes passing a NF 3 gas.
17. The method of claim 13 , wherein to form the thin film includes to form an insulation material layer.
18. The method of claim 13 , wherein to form the thin film includes to form a high resistance thin film.
19. The method of claim 18 , wherein to form the high resistance thin film includes to form intrinsic amorphous silicon.
20. The method of claim 13 , wherein a gas used in the discharge plasma treatment is selected from the group consisting of a hydrogen gas, a nitrogen gas, an argon gas and a helium gas.