Method and apparatus for etch rate uniformity control
View Patent ↗A method for controlling a process on a substrate. The method comprising: providing the substrate, the substrate having an upper surface, an opposite lower surface and an edge between the upper and lower surfaces; processing the upper surface of the substrate with a first fluid; directing a second fluid against a portion of the lower surface proximate to the edge of the substrate, wherein the second fluid flows adjacent to the edge of the substrate; and controlling the temperature of the second fluid in order to affect a processing of an edge region of the upper side of the substrate.
1. A method for controlling a process on a substrate comprising:
providing the substrate, the substrate having an upper surface, an opposite lower surfaces and an outer edge between the upper and lower surfaces;
processing the upper surface of the substrate with a first fluid;
directing a second fluid against a portion of the lower surface proximate to the outer edge of the substrate, wherein said second fluid flows adjacent to the outer edge of the substrate, and wherein said second fluid further flows toward the outer edge of the substrate while in direct contact with the lower surface of the substrate; and
controlling the temperature of said second fluid in order to affect a processing of an edge region of the upper surface of the substrate.
2. The method of claim 1 wherein the substrate is a semiconductor wafer.
3. The method of claim 1 , wherein the second fluid comprises a gas.
4. The method of claim 1 wherein controlling the temperature of said second fluid comprises increasing the temperature of the second fluid above an ambient temperature.
5. The method of claim 1 , wherein processing the upper surface of the substrate comprises etching said upper surface.
6. The method of claim 1 , further including rotating the substrate.
7. The method of claim 1 , further comprising providing a temperature sensor that measures the temperature of the second fluid near the outer edge of the substrate.
8. The method of claim 7 , further comprising providing a controller for displaying the temperature measured by the temperature sensor, said controller being electrically connected to the temperature sensor.
9. The method of claim 8 , wherein controlling the temperature of the second fluid comprises heating or cooling the second fluid by a thermal device that is electrically connected to the controller, said thermal device being a heater or a chiller.
10. A method for processing a substrate having an upper surface, an opposite lower surface and an outer edge between the upper and lower surfaces, comprising:
providing a chuck for elevating the substrate above a top surface of said chuck using a suspension fluid, said suspension fluid delivered from an annular opening in said upper surface of said chuck, said annular opening located proximate to an edge of said chuck, said suspension fluid flowing toward the outer edge of the substrate while in direct contact with the lower surface of the substrate proximate to the outer edge of the substrate;
delivering a processing fluid to the upper surface of the substrate; and
maintaining the temperature of said suspension fluid at a temperature different from an ambient temperature while delivering said processing fluid.
11. The method of claim 10 , further including rotating said chuck.
12. The method of claim 10 , further comprising providing a temperature sensor that measures the temperature of the suspension fluid near the outer edge of the substrate.
13. The method of claim 12 , further comprising providing a controller for displaying the temperature measured by the temperature sensor, said controller being electrically connected to the temperature sensor.
14. The method of claim 12 , wherein maintaining the temperature of the suspension fluid comprises heating or cooling the suspension fluid by a thermal device that is electrically connected to the controller, said thermal device being a heater or a chiller.