High power block upconverter
View Patent ↗A system and method for high power block upconversion having a stand-alone and surface-mountable component is provided. The HP-BUC system of the invention provides a “drop-in” component capable of mixing a local oscillator signal with an IF signal to produce an RF signal in the millimeter-wave and higher bands. In addition, the HP-BUC provides filtering of unwanted spurious signals and requires no further signal amplification prior to transmission, for example in a satellite communications system.
1. A block-up converter comprising:
a subharmonic mixer;
wherein said subharmonic mixer is configured to receive a first input signal, wherein said first input signal is an intermediate frequency signal;
wherein said subharmonic mixer is further configured to receive a second input signal, wherein said second input signal is a local oscillator signal in the Ku band or lower,
wherein said subharmonic mixer is configured to output a RF signal having a frequency greater than 26 GHz;
a filter configured to receive said RF signal and filter unwanted spurious signals which may be present in said RF signal; and
a power amplification device configured to receive said RF signal and to provide a desired signal gain;
wherein said subharmonic mixer, said filter, and said amplification device are located on a single multi-chip module, such that all signal interfaces with said multi-chip module occur at frequencies less than 26 GHz except for the final output of said RF signal from said multi-chip module; wherein said multi-chip module is configured to be surface mounted using a lead frame interface;
wherein said block-up converter is configured to be a high power block-up converter, wherein high power is defined to be any power greater than 1 Wart; and
wherein said block-up converter is configured to provide a high frequency output, wherein high frequency is defined to be any frequency greater than 26 GHz.
2. The block-up converter of claim 1 , further comprising a wave-guide interface configured to output said RF signal from said multi-chip module.
3. The block-up converter of claim 1 , further comprising an insert coupled to said high power amplification device, wherein said insert comprises a material characteristic of at least one of: high thermal conductivity and low thermal expansion properties.
4. The block-up converter of claim 1 , further comprising a chassis and a cover, wherein said chassis and said cover are secured together to substantially encase said block-up converter.
5. The block-up converter of claim 1 , wherein said multi-chip module is configured to be a drop-in component within the next higher assembly level.
6. A block-up converter comprising:
a subharmonic mixer;
wherein said subharmonic mixer is configured to receive a first input signal, wherein said first input signal is an intermediate frequency signal;
wherein said subharmonic mixer is further configured to receive a second input signal, wherein said second input signal is a local oscillator signal in the Ku band or lower;
wherein said subharmonic mixer is configured to output a RF signal having a frequency greater than 26 GHz;
a filter configured to receive said RF signal and filter unwanted spurious signals which may be present in said RF signal; and
a power amplification device configured to receive said RF signal and to provide a desired signal gain;
wherein said subharmonic mixer, said filter, and said amplification device are located on a single multi-chip module,
wherein said block-up converter is configured to be a high power block-up converter, wherein high power is defined to be any power greater than 1 Watt; and
wherein said block-up converter is configured to provide a high frequency output, wherein high frequency is defined to be any frequency greater than 26 GHz.
7. The black-up converter of claim 6 , wherein said multi-chip module is configured to be surface mounted using a lead frame interface.
8. The block-up converter of claim 6 , further comprising a wave-guide interface configured to output said RF signal from said multi-chip module.
9. The block-up converter of claim 6 , further comprising an insert coupled to said high power amplification device, wherein said insert comprises a material characteristic of at least one of: high thermal conductivity and low thermal expansion properties.
10. The block-up converter of claim 6 , further comprising a chassis and a cover, wherein said chassis and said cover are secured together to substantially encase said block-up converter.
11. The block-up converter of claim 6 , wherein said maid-chip module is configured to be a drop-in component within the next higher assembly level.
12. A method for assembling a block-up converter on a single multi-chip module, the method comprising the steps of:
electrically connecting a subharmonic mixer on a multi-chip module to a filter on said multi-chip module;
wherein said subharmonic mixer is configured to receive a first input signal, wherein said first input signal is an intermediate frequency signal;
wherein said subharmonic mixer is further configured to receive a second input signal, wherein said second input signal is a local oscillator signal in the Ku band or lower;
wherein said subharmonic mixer is configured to output a RF signal having a frequency greater than 26 GHz;
wherein said filter is configured to receive said RF signal and filter unwanted spurious signals which may be present in said RF signal; and
electrically connecting said filter to a power amplification device that is also located on said multi-chip module,
wherein said power amplification device is configured to receive said RE signal and to provide a desired signal gain;
wherein said block-up converter is configured to be a high power block-up converter, wherein high power is defined to be any power greater than 1 Watt; and
wherein said block-up converter is configured to provide a high frequency output,
wherein high frequency is defined to be any frequency greater than 26 GHz.
13. The method of claim 12 , further comprising the step of electrically connecting said power amplification device to a wave-guide interface on said multi-chip module that is configured to output said RF signal from said multi-chip module.
14. The method of claim 12 , further comprising the step of surface mounting said multi-chip module using a lead frame interface to the next higher assembly level.
15. The method of claim 12 , further comprising the step of securing a chassis and a cover together to substantially encase said block-up convener.
16. The method of claim 14 , further comprising the step of electrically connecting a driver amplifier, also located on said multi-chip module, between at least one of said subharmonic mixer, said filter, and said power amplification device.