IP Library › Granted Patent US 6,531,369
Granted Patent Utility
US 6,531,369 · Confirmation No. 9983

HETEROJUNCTION BIPOLAR TRANSISTOR (HBT) FABRICATION USING A SELECTIVELY DEPOSITED SILICON GERMANIUM (SIGE)

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 Code Description Pages PDF
2009-08-13 R3.73 Assignee showing of ownership per 37 CFR 3.73 1 View
2009-08-13 N417 Electronic Filing System Acknowledgment Receipt 2 View
2009-01-22 N570 Communication - Re: Power of Attorney (PTOL-308) 1 View
2009-01-22 N570 Communication - Re: Power of Attorney (PTOL-308) 1 View
2008-12-16 N417 Electronic Filing System Acknowledgment Receipt 2 View
2008-12-16 PA.. Power of Attorney 1 View
2008-12-16 R3.73 Assignee showing of ownership per 37 CFR 3.73 1 View
2002-02-14 TRNA Transmittal of New Application 4 View
2002-02-14 A.PE Preliminary Amendment 5 View
2002-02-14 SPEC Specification 13 View
2002-02-14 CLM Claims 6 View
2002-02-14 ABST Abstract 1 View
2002-02-14 DRW Drawings-only black and white line drawings 9 View
2002-02-14 OATH Oath or Declaration filed 3 View
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Quick Facts
Patent No.
US 6,531,369
App. No.
10/075,700
Filed
2002-02-14
Granted
2003-03-11
Art Unit
2815
PTA
-61 days