Method for forming passive optical coupling device
View Patent ↗A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.
1. A method for forming a passive optical waveguide coupling device on a Silicon-On-Insulator (SOI) wafer, comprising a substrate, an insulator layer disposed over said substrate and an upper silicon layer disposed over said insulator layer, the method comprising the steps of:
defining, using lithography, at least one prescribed region of the upper silicon layer of the SOI wafer for the location of a passive optical waveguide coupling portion;
forming at least one passive optical coupling portion that includes in part an evanescent coupling region in the defined at least one prescribed region during fabrication of the optical chip.
2. The method of claim 1 , wherein the passive optical coupling portion includes one of the group of a waveguide grating, a waveguide prism, or a waveguide lens.
3. The method of claim 1 , wherein the SOI wafer includes a waveguide.
4. The method of claim 1 , wherein the evanescent coupling region includes a tapered gap.
5. The method of claim 1 , wherein the evanescent coupling region includes a constant gap.
6. The method of claim 1 , wherein the SOI wafer further includes a mirror.
7. The method of claim 1 , wherein the SOI wafer includes a waveguide configured as a focusing mirror.
8. The method of claim 3 , wherein the waveguide is configured as a Fabry-Perot cavity.
9. The method of claim 3 , wherein the waveguide is configured as a wavelength division multiplexer modulator.
10. The method of claim 3 , wherein the waveguide is configured as an evanescent coupler.
11. The method of claim 3 , wherein the waveguide is configured as a diode.
12. The method of claim 3 , wherein the waveguide is configured as a transistor.
13. The method of claim 3 , wherein the waveguide includes one from the group of a p-n device, a field plated device, a Schottky device, a MOSCAP, and a MOSFET.