Semiconductor device and manufacturing method thereof
View Patent ↗The present invention has an object to provide an active-matrix liquid crystal display device that realizes the improvement in productivity as well as in yield. In the present invention, a laminate film comprising the conductive film comprising metallic material and the second amorphous semiconductor film containing an impurity element of one conductivity type and the amorphous semiconductor film is selectively etched with the same etching gas to form a side edge of the first amorphous semiconductor film 1001 into a taper shape. Thereby, a coverage problem of a pixel electrode 1003 can be solved and an inverse stagger type TFT can be completed with three photomask. Selected figure is FIG. 15.
1. A method of manufacturing a semiconductor device, comprising:
forming a gate wiring over an insulating surface;
forming an insulating film covering the insulating surface and the gate wiring;
forming a first amorphous semiconductor film over the insulating film;
forming a second amorphous semiconductor film containing an impurity element of one conductivity type over the first amorphous semiconductor film;
forming a metal film over the second amorphous semiconductor film;
etching the metal film, the second amorphous semiconductor film and the first amorphous semiconductor film continuously to form a side edge of the first amorphous semiconductor film into a taper shape;
forming a transparent conductive film in contact with the metal film; and
etching the transparent conductive film, the metal film, the second amorphous semiconductor film and the first amorphous semiconductor film to expose a part of the first amorphous semiconductor film, to form a pixel electrode from the transparent conductive film, to form a source wiring from the metal film and to form a source region and a drain region from the second amorphous semiconductor film.
2. A method of manufacturing a semiconductor device, comprising:
forming a gate wiring over an insulating surface;
forming an insulating film covering the insulating surface and the gate wiring;
forming a first amorphous semiconductor film over the insulating film;
forming a second amorphous semiconductor film containing an impurity element of one conductivity type over the first amorphous semiconductor film;
forming a metal film over the second amorphous semiconductor film;
etching the metal film, the second amorphous semiconductor film, the first amorphous semiconductor film and the insulating film continuously to form a side edge of the first amorphous semiconductor film into a taper shape;
forming a transparent conductive film in contact with the metal film; and
etching the transparent conductive film, the metal film, the second amorphous semiconductor film and the first amorphous semiconductor film to expose a part of the first amorphous semiconductor film, to form a pixel electrode from the transparent conductive film, to form a source wiring from the metal film and to form a source region and a drain region from the second amorphous semiconductor film.
3. The method of manufacturing the semiconductor device according to one of claim 1 and claim 2 , wherein in the former etching step, the metal film, the second amorphous semiconductor film and the first amorphous semiconductor film are etched with a chlorine type gas.
4. The method of manufacturing the semiconductor device according to one of claim 1 and claim 2 , wherein in the latter etching step, the metal film, the second amorphous semiconductor film and the first amorphous semiconductor film are etched with a chlorine type gas.
5. The method of manufacturing the semiconductor device according to claim 3 , wherein the chlorine type gas contains at least one selected from the group consisting of Cl 2 , BCl 3 , HCl and SiCl 4 .
6. A method of manufacturing a semiconductor device, comprising:
forming a gate wiring over an insulating surface;
forming an insulating film over the insulating surface and the gate wiring;
forming a first amorphous semiconductor film over the insulating film;
forming a second amorphous semiconductor film containing an impurity element of one conductivity type over the first amorphous semiconductor film;
forming one of an aluminum film and a titanium film over the second amorphous semiconductor film;
etching the one of the aluminum film and the titanium film, the second amorphous semiconductor film and the first amorphous semiconductor film continuously to form a side edge of the first amorphous semiconductor film into a taper shape;
forming a transparent conductive film in contact with the one of the aluminum film and the titanium film; and
etching the transparent conductive film, the one of the aluminum film and the titanium film and the second amorphous semiconductor film to form a pixel electrode, a source wiring, a source region and a drain region,
wherein the first amorphous semiconductor film is etched into the taper shape with a mixture gas of Cl 2 and BCl 2 .
7. A method of manufacturing a semiconductor device, comprising:
forming a gate wiring over an insulating surface;
forming an insulating film over the insulating surface and the gate wiring;
forming a first amorphous semiconductor film over the insulating film;
forming a second amorphous semiconductor film containing an impurity element of one conductivity type over the first amorphous semiconductor film;
forming a tantalum film over the second amorphous semiconductor film;
etching the tantalum film, the second amorphous semiconductor film and the first amorphous semiconductor film continuously to form a side edge of the first amorphous semiconductor film into a taper shape;
forming a transparent conductive film in contact with the tantalum film; and
etching the transparent conductive film, the tantalum film and the second amorphous semiconductor film to form a pixel electrode, a source wiring, a source region and a drain region,
wherein the first amorphous semiconductor film is etched into the taper shape with a mixture gas of Cl 2 and CF 4 .
8. A method of manufacturing a semiconductor device, comprising:
forming a gate wiring over an insulating surface;
forming an insulating film over the insulating surface and the gate wiring;
forming a first amorphous semiconductor film over the insulating film;
forming a second amorphous semiconductor film containing an impurity element of one conductivity type over the first amorphous semiconductor film;
forming a tungsten film over the second amorphous semiconductor film;
etching the tungsten film, the second amorphous semiconductor film and the first amorphous semiconductor film continuously to form a side edge of the first amorphous semiconductor film into a taper shape;
forming a transparent conductive film in contact with the tungsten film; and
etching the transparent conductive film, the tungsten film and the second amorphous semiconductor film to form a pixel electrode, a source wiring, a source region and a drain region,
wherein the first amorphous semiconductor film is etched into the taper shape with one of a mixture gas of Cl 2 , CF 4 and O 2 and a mixture gas of Cl 2 , SF 6 and O 2 .
9. The method of manufacturing the semiconductor device according to claim 4 , wherein the chlorine type gas contains at least one selected from the group consisting of Cl 2 , BCl 3 , HCl and SiCl 4 .
10. The method of manufacturing the semiconductor device according to any one of claims 6 – 8 , wherein a chlorine type gas is used in the step of etching the transparent conductive film, the one of the aluminum film, the titanium film, the tantalum film and the tungsten film and the second amorphous semiconductor film.
11. The method of manufacturing the semiconductor device according to claim 10 , wherein the chlorine type gas contains at least one selected from the group consisting of Cl 2 , BCl 3 , HCl and SiCl 4 .
12. A method of manufacturing a semiconductor device, comprising:
forming a gate wiring over an insulating surface;
forming an insulating film covering the insulating surface and the gate wiring;
forming a first amorphous semiconductor film over the insulating film;
forming a second amorphous semiconductor film containing an impurity element of one conductivity type over the first amorphous semiconductor film;
forming a metal film over the second amorphous semiconductor film;
etching the metal film, the second amorphous semiconductor film and the first amorphous semiconductor film without changing an etching gas to form a side edge of the first amorphous semiconductor film into a taper shape;
forming a transparent conductive film in contact with the metal film; and
etching the transparent conductive film, the metal film, the second amorphous semiconductor film and the first amorphous semiconductor film to expose a part of the first amorphous semiconductor film, to form a pixel electrode from the transparent conductive film, to form a source wiring from the metal film and to form a source region and a drain region from the second amorphous semiconductor film.
13. A method of manufacturing a semiconductor device, comprising:
forming a gate wiring over an insulating surface;
forming an insulating film covering the insulating surface and the gate wiring;
forming a first amorphous semiconductor film over the insulating film;
forming a second amorphous semiconductor film containing an impurity element of one conductivity type over the first amorphous semiconductor film;
forming a metal film over the second amorphous semiconductor film; etching the metal film, the second amorphous semiconductor film, the first amorphous semiconductor film and the insulating film without changing an etching gas to form a side edge of the first amorphous semiconductor film into a taper shape;
forming a transparent conductive film in contact with the metal film; and
etching the transparent conductive film, the metal film, the second amorphous semiconductor film and the first amorphous semiconductor film to expose a part of the first amorphous semiconductor film, to form a pixel electrode from the transparent conductive film, to form a source wiring from the metal film and to form a source region and a drain region from the second amorphous semiconductor film.
14. The method of manufacturing the semiconductor device according to claim 12 , wherein a chlorine type gas is used as the etching gas.
15. The method of manufacturing the semiconductor device according to claim 13 , wherein a chlorine type gas is used as the etching gas.
16. The method of manufacturing the semiconductor device according to one of claim 12 and claim 13 , wherein a chlorine type gas is used in the step of etching the transparent conductive film, the metal film, the second amorphous semiconductor film and the first amorphous semiconductor film.
17. The method of manufacturing the semiconductor device according to one of claim 14 and claim 15 wherein the chlorine type gas contains at least one selected from the group consisting of Cl 2 , BCl 3 , HCl and SiCl 4 .
18. The method of manufacturing the semiconductor device according to claim 16 , wherein the chlorine type gas contains at least one selected from the group consisting of Cl 2 , BCl 3 , HCl and SiCl 4 .
19. The method of manufacturing the semiconductor device according to one of claim 1 and claim 2 , wherein the former etching step contains etching treatments using a chlorine type solution and etching gases.
20. The method of manufacturing the semiconductor device according to any one of claims 6 – 8 , wherein the latter etching step contains etching treatments using a chlorine type solution and etching gases.
21. The method of manufacturing the semiconductor device according to one of claim 12 and claim 13 , wherein the latter etching step contains etching treatments using a chlorine type solution and etching gases.