Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same

1. A process of making polishing pads for use in chemical mechanical polishing of substrates, each said polishing pad having a ground polishing surface and consisting of a porous fibrous matrix of paper-making fibers, fillers, and a binder for binding said fibrous matrix, said binder consisting of thermoset resin, said matrix and said binder forming a porous structure by which polishing slurry or polishing debris during chemical mechanical polishing of substrates are temporarily stored for subsequent rinsing away and for enhanced flow-distribution of the polishing slurry; said ground polishing surface consisting of a ground surface in order that said matrix thereat is of open-pore construction and defines surface asperities by which said optimal distribution of polishing slurry during chemical mechanical polishing of substrates is achieved, so that polishing slurry may be readily absorbed and optimally distributed during chemical mechanical polishing of substrate, said polishing pads being made by a process comprising:

(a) making said polishing pads using a wet-laid paper-making process;

(b) said step (a) comprising forming a slurry of at least water, paper-making fibers, and latex;

(c) mixing said slurry of said step (b) in order to disperse the fibers;

(d) delivering said mixed slurry to a paper-making apparatus, and forming a wet-laid sheet;

(e) drying the wet-laid sheet of said step (d);

(f) adding thermoset resin binder;

(g) said step (f) comprising at least one of: adding the thermoset resin during said step (b), and after said step (e);

(h) curing the sheet;

(i) cutting the sheet to form polishing pads of desired size;

(j) grinding at least one surface face of each said polishing pad to form said asperities and to open the porous matrix for polishing slurry transport during CMP processes.