High-qualty aluminum-doped zinc oxide layer as transparent conductive electrode for organic light-emitting devices
View Patent ↗An organic light-emitting diode is described in which the anode comprises midfrequency magnetron sputtered aluminum-doped zinc oxide to increase the device stability and to decrease the material cost. Due the novel deposition technique, ZnO:Al film with ITO-like electrical conductivity can be deposited and improved device performance, especially the long-term stability can be obtained which are attributed to the modification of the ZnO:Al conductivity and surface chemistry.
1. An electroluminescent device comprising an organic or polymer-light emitting diode comprising:
a) a substrate formed of an electrically insulating material chosen from an optically transparent material and an opaque material;
b) a conductive anode comprised of aluminum-doped zinc oxide films formed over the substrate by a magnetron sputtering process, wherein the surface of the aluminum-doped zinc oxide films is chemically modified at the end of the deposition process by reducing the oxygen partial pressure and the substrate temperature to provide an atomic ratio of Zn:O greater than 1 and a ZnO:Al surface work function greater than 4.3 eV, and wherein the conductive anode exhibits a carrier density greater than 8×10 20 cm −3 ;
c) an organic or polymer light-emitting structure formed over the conductive anode; and
d) a cathode formed over the light-emitting structure.
2. The electroluminescent device according to claim 1 , wherein the substrate is an optically transparent material chosen from glass and plastic.
3. The electroluminescent device according to claim 1 , wherein the substrate is an opaque material chosen from a ceramic or semi-conducting material.
4. The electroluminescent device according to claim 1 , wherein the aluminum-doped zinc oxide is deposited by a midfrequency magnetron sputtering process.
5. The electroluminescent device according to claim 1 , wherein the aluminum-doped zinc oxide is a composition having an atomic ratio of Zn:O greater than 1, said composition comprising:
a) zinc in a range of 30-70 atomic percent;
b) oxygen in a range of 70-30 atomic percent; and
c) aluminum in a range of 10 atomic percent or less.
6. The electroluminescent device according to claim 2 , wherein the aluminum-doped zinc oxide is a composition having an atomic ratio of Zn:O greater than 1, said composition comprising:
a) zinc in a range of 30-70 atomic percent;
b) oxygen in a range of 70-30 atomic percent; and
c) aluminum in a range of 10 atomic percent or less.
7. The electroluminescent device according to claim 3 , wherein the aluminum-doped zinc oxide is a composition having an atomic ratio of Zn:O greater than 1, said composition comprising:
a) zinc in a range of 30-70 atomic percent;
b) oxygen in a range of 70-30 atomic percent; and
c) aluminum in a range of 10 atomic percent or less.
8. The electroluminescent device according to claim 4 , wherein the aluminum-doped zinc oxide is a composition having an atomic ratio of Zn:O greater than 1, said composition comprising:
a) zinc in a range of 30-70 atomic percent;
b) oxygen in a range of 70-30 atomic percent; and
c) aluminum in a range of 10 atomic percent or less.
9. A method of making an organic light-emitting diode comprising the steps of:
a) providing a substrate;
b) forming an anode on the substrate, the anode comprised of aluminum-doped zinc oxide films deposited by magnetron sputtering at a temperature lower than 200° C., wherein the surface of the aluminum-doped zinc oxide films is chemically modified at the end of the deposition process by reducing the oxygen partial pressure and the substrate temperature to provide an atomic ratio of Zn:O greater than 1 and a ZnO:Al surface work function greater than 4.3 eV, and wherein the conductive anode exhibits a carrier density greater than 8×10 20 cm 31 3 ;
c) forming an organic or polymer light-emitting structure over the anode; and
d) depositing a cathode layer over the light-emitting structure.