IP Library Granted Patent US 7,081,661
Granted Patent B2
US 7,081,661 · App. 10/098,895 · Granted Jul 25, 2006

High-frequency module and method for manufacturing the same

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Quick Facts
Patent No.
US 7,081,661
App. No.
10/098,895
Granted
Jul 25, 2006
Kind
B2
Abstract

In the high-frequency module of the present invention, an insulating resin is formed so as to seal a high-frequency semiconductor element mounted on a surface of a substrate and further to seal electronic components. Furthermore, a metal thin film is formed on the surface of the insulating resin. This metal thin film provides an electromagnetic wave shielding effect.

Claims (15)

1. A high-frequency module comprising:

a substrate;

a high-frequency circuit that is mounted on a surface of the substrate and comprises a high-frequency semiconductor element, the high-frequency circuit comprising a wiring pattern connected to a ground potential;

an insulating resin formed so as to seal at least the high-frequency semiconductor element and to have a rectangular surface, the insulating resin comprising an aperture exposing the wiring pattern; and

a metal thin film formed on an upper surface of the insulating resin,

wherein the wiring pattern is electrically connected to the metal thin film at the aperture.

2. The high-frequency module according to claim 1 ,

wherein the aperture has a minimum width of at least 0.2 mm and at most 5 mm.

3. The high-frequency module according to claim 1 , wherein a film thickness of the metal thin film is at least 1 μm or more and at most 300 μm.

4. The high-frequency module according to claim 1 , wherein the metal thin film is multilayered.

5. The high-frequency module according to claim 1 , wherein the aperture in the insulating resin is provided at a periphery of the surface of the substrate.

6. The high-frequency module according to claim 1 , wherein the aperture is a cut-out formed on a side face of the insulating resin.

7. The high-frequency module according to claim 1 , wherein at least one inner side face of the aperture in the insulating resin is tapered such that the inner side face defines an acute angle with the substrate surface on the insulating resin side.

8. The high-frequency module according to claim 6 , wherein at least one side face of the cut-out of the insulating resin is tapered such that the side face defines an acute angle with the substrate surface on the insulating resin side.

9. The high-frequency module according to claim 1 , wherein the substrate is a resin substrate or a ceramic substrate.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 27, 2020
From: PANASONIC CORPORATION
To: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.
Reel/Frame 052755/0917 →
CHANGE OF NAME Recorded Mar 18, 2020
From: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
To: PANASONIC CORPORATION
Reel/Frame 052184/0943 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 26, 2002
From: TAKEHARA, HIDEKI; YOSHIKAWA, NORIYUKI; KANAZAWA, KUNIHIKO
To: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Reel/Frame 013032/0141 →