IP Library › Granted Patent US 6,878,625
Granted Patent B2
US 6,878,625 · App. 10/107,103 · Granted Apr 12, 2005

Method for manufacturing semiconductor device

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Quick Facts
Patent No.
US 6,878,625
App. No.
10/107,103
Granted
Apr 12, 2005
Kind
B2
Abstract

In a semiconductor device manufacturing apparatus comprising at least a reaction chamber and a substrate holder located within the reaction chamber, a silicon nitride film is deposited on the substrate holder within the reaction chamber, and then, a semiconductor substrate is put on the silicon nitride film of the substrate holder within the reaction chamber. A titanium film or a titanium nitride film is deposited on the semiconductor substrate within the reaction chamber, by a chemical vapor deposition process using a titanium halide as a raw material gas.

Claims (11)

1. A semiconductor device manufacturing method for forming a titanium film or a titanium nitride film on a principal surface of a semiconductor substrate by a chemical vapor deposition process using a titanium halide as a raw material gas, the method comprising:

providing a semiconductor device manufacturing apparatus comprising at least a reaction chamber and a substrate supporting member formed of a nickel-based alloy located within said reaction chamber and coated with a silicon nitride film;

locating a semiconductor substrate on said silicon nitride film of said substrate supporting member within said reaction chamber; and

depositing a titanium film or a titanium nitride film on an upper surface of said semiconductor substrate held on said substrate supporting member within said reaction chamber, by a chemical vapor deposition process using a titanium halide as a raw material gas.

2. A semiconductor device manufacturing method claimed in claim 1 wherein said silicon nitride film is further coated with a titanium nitride film, and said semiconductor substrate is located on said titanium nitride film of said substrate supporting member.

3. A semiconductor device manufacturing method for forming a titanium film or a titanium nitride film on a principal surface of a semiconductor substrate by a chemical vapor deposition process using a titanium halide as a raw material gas, the method comprising:

providing a semiconductor device manufacturing apparatus comprising at least a reaction chamber and a substrate supporting member formed of a nickel-based alloy located within said reaction chamber;

depositing a silicon nitride film on a surface of said substrate supporting member within said reaction chamber;

locating a semiconductor substrate on said silicon nitride film of said substrate supporting member within said reaction chamber; and

depositing a titanium film or a titanium nitride film on said semiconductor substrate held on said substrate supporting member within said reaction chamber, by a chemical vapor deposition process using a titanium halide as a raw material gas.

4. A semiconductor device manufacturing method claimed in claim 3 wherein after said silicon nitride film is deposited on said substrate supporting member within said reaction chamber, a titanium nitride film is deposited on said silicon nitride film of said substrate supporting member within said reaction chamber, and thereafter, said semiconductor substrate is located on said titanium nitride film of said substrate supporting member.